Browsing by Author "Lee, CM"

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A novel LC-Tank ESD protection design for giga-Hz RF circuits
(2003)
Ker, MD
;
Chou, CI
;
Lee, CM
;
電機學院
;
College of Electrical and Computer Engineering
To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-mum CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).
Errors-and-erasures decoding of block codes in hidden Markov channels
(2001)
Lee, CM
;
Su, YT
;
電信工程研究所
;
Institute of Communications Engineering
Most investigation on the performance of block codes assume perfect interleaving and memoryless channels that introduce only random errors. Some authors investigate the effect of finite interleaving size on the decoder performance, using a two-state Gilbert-Elliott (GE) model to characterize the channel effect. However, there are circumstances that the burst-error channel of concern can not be properly described by a two-state GE model. This paper extends earlier analysis to investigate the performance of block codes in an environment that can be modeled as an arbitrary finite-state Markov chain.
ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness
(2002-01-01)
Ker, MD
;
Lo, WY
;
Lee, CM
;
Chen, CP
;
Kao, HS
This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBAP ESD robustness of 8kV. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-mum CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8kV under the HBM ESD test.
ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness
(2002)
Ker, MD
;
Lo, WY
;
Lee, CM
;
Chen, CP
;
Kao, HS
This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of ME By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-mum CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8kV under the HBM ESD test.
Interference of esd protection diodes on RF performance in GIGA-HZ RF circuits
(2003)
Ker, MD
;
Lee, CM
;
電機學院
;
College of Electrical and Computer Engineering
The power gain and noise figure of two kinds of diode structures in a 0.25-mum CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (similar toGHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.