Browsing by Author "Lee, Chao-Yu"

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Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy
(2017-07-05)
Susanto, Iwan
;
Tsou, Tsung-Han
;
Yang, Zu-Po
;
Lee, Chao-Yu
;
Li, Hui
High-quality GaN films grown on 4H-SiC (0001) substrate with 4 of miscutting orientation have been done by plasma-assisted molecular beam epitaxy with different N/Ga flux ratio. The effect of N/Ga flux ratio on the surface morphology, chemical composition, structural and optical properties was systematically investigated. The observations of in-situ reflective high-energy electron diffraction demonstrated the special surface of SiC substrate and GaN growth transition from two-to three-dimension depending on N/Ga flux ratio. In the Ga-rich condition for epitaxy, Ga droplets formed and the root mean square value of surface roughness increased by the characterizations of scanning electron microscopy and atomic force microscopy which also related to the formation of the pits on the surface due to the accumulation of excess Ga on the surface. The better growth parameter of GaN films in the work is N/Ga flux ratio of 28 at substrate temperature 700 degrees C. Its surface oxide and charge-compensated surface state associated with defects are minimized from the surface composition analysis of X-ray photoelectron spectroscopy. In the structural characterization of high-resolution X-ray diffraction, the value of full width at half maximum and density of threading dislocation are lower to prove the high-quality structure of GaN film grown at N/Ga flux ratio of 28. Finally, the photoluminescence analysis performed the narrow near-band-edge peak and yellow band, corresponding to the better quality of GaN films. In this report, high-quality GaN films on 4H-SiC (0001) with 4 of miscutting orientation have been demonstrated by the reduction of defect states via the different N/Ga flux ratio. N/Ga flux ratio not only influences the growth mechanism and surface morphology, but also the surface chemical composition, crystal quality and optical properties of GaN compound semiconductors. (C) 2017 Elsevier B.V. All rights reserved.
Effects of substrate and annealing on GaN films grown by plasma-assisted molecular beam epitaxy
(2017-06-25)
Yang, Zu-Po
;
Tsou, Tsung-Han
;
Lee, Chao-Yu
;
Kan, Ken-Yuan
;
Yu, Ing-Song
GaN films were deposited by plasma-assisted molecular beam epitaxy on different substrates, i.e. Si (111), Sapphire (0001) and 4H-SiC (0001) with 4 degrees of miscutting orientation. Due to the lattice mismatch between GaN films and substrates, the substrates profoundly affect the growth mechanism of GaN films on them during the epitaxy. The smooth and complete GaN films can be obtained on 4H-SiC substrates based on the analyses of reflection high energy electron diffraction, scanning electron microscopy and atomic force microscopy. Higher quality of GaN films on 4H-SiC was also confirmed by high resolution X-ray diffraction. Photoluminescence measurements show that the compress stress existed in GaN films grown on sapphire, but tensile stress was observed in the films grown on 4H-SiC and Si. Meanwhile, in-situ annealing treatment of post expitxy can remove Ga droplets on GaN films and decrease the surface roughness and defect density of GaN films; however, thermal decomposition on the surface of GaN films was observed in the characterizations of X-ray photoelectron spectroscopy. (C) 2016 Elsevier B.V. All rights reserved.