Browsing by Author "Lee, Chawn-Ying"

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Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
(2017-07-01)
Tsui, Bing-Yue
;
Cheng, Jung-Chien
;
Yen, Cheng-Tyng
;
Lee, Chawn-Ying
;
電機學院
The effect of pre-metal deposition cleaning on 4H-SiC Schottky barrier diodes (SBDs) by using Ar ion bombardment in an inductively coupled plasma (ICP) chamber was investigated. The ICP treatment produced a thin and Si-depleted amorphous layer on the SiC surface. Partial graphitization was observed in the amorphous layer after post-metal deposition (PMD) annealing. This interfacial layer strongly pinned the Schottky barrier height (SBH). PMD annealing at 500 degrees C resulted in a constant SBH (approximately 1.1 eV) and narrow SBH distribution (standard deviation < 3 meV). However, the amorphous layer was consumed after 600 degrees C PMD annealing due to interfacial reactions. These results suggest that the Ar ion bombardment technique with a suitable thermal budget can be used to form relatively uniform SBDs. (C) 2017 Elsevier Ltd. All rights reserved.