Browsing by Author "Lee, Chiang-Hsuan"

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Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H-2 Sintering
(2014-03-01)
Yen, Li-Chen
;
Tang, Ming-Tsyr
;
Chang, Fang-Yu
;
Pan, Tung-Ming
;
Chao, Tien-Sheng
In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H-2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H-2 sintering exhibited a high sensitivity than that without H-2 sintering. This result may be due to the resulting increase in the number of Si-OH2+ and Si-O- bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.
Label-free and real-time detection of ferritin using a horn-like polycrystalline-silicon nanowire field-effect transistor biosensor
(2016-07)
Yen, Li-Chen
;
Pan, Tung-Ming
;
Lee, Chiang-Hsuan
;
Chao, Tien-Sheng
;
電子物理學系
In this paper, we used the horn-like polycrystalline-silicon nanowire field-effect transistor (poly-Si NW FET) biosensors to detect ferritin. It employs the trapezoidal-shape dummy gate structure fabricated at the spacer wire process to form the shape of horn-like nanowires. The horn-like poly-Si NW FET using a channel length of 2 mu m exhibited better electrical characteristics, such as a smaller threshold voltage of 1.1 V and a higher I-on/I-off of 3.47 x 10(5), compared to other channel lengths. In addition, the horn-like poly-Si NW FET sensor exhibited a high sensitivity of 133.47 mV/pH exceeding the Nernst limit. This result is attributed to the higher capacitive-coupling ratio (top-gate capacitance to bottom-gate capacitance). Moreover, we used a horn-like poly-Si NW FET biosensor to detect the ferritin in buffer solution due to its label-free, real-time, and high-sensitive. We modified 3-aminopropyltriethoxysilane on the SiO2/Si3N4/SiO2 stacked surface followed by glutaraldehyde functionalized, and the ferritin antibodies were immobilized on the aldehyde terminal. While the serum ferritin antigen was prepared in the buffer, the results indicated that the sensor could detect serum ferritin below 50 pg/mL in a micro-fluidic channel. (C) 2016 Elsevier B.V. All rights reserved.