Browsing by Author "Lee, Chuo-Han"

Now showing 1 - 2 of 2

A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
(2013-08-01)
Wu, Yin-Hao
;
Lee, Chuo-Han
;
Chu, Chung-Ming
;
Yeh, Yen-Hsien
;
Chen, Chan-Lin
A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([(1) over bar 100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography. (C) 2013 The Japan Society of Applied Physics
The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN
(2014-12-01)
Shih, Cheng-Hung
;
Lo, Ikai
;
You, Shuo-Ting
;
Tsai, Cheng-Da
;
Tseng, Bae-Heng
We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (000 (1) over bar) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications. (C) 2014 Author(s).