Browsing by Author "Lee, Hsin-Hua"
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Item type:Item, Magnetic-coupled phase anomaly in mixed-phase BiFeO3 thin films(2017-08-01) ;Huang, Yen-Chin ;Liou, Yi-De ;Liu, Heng-Jui ;Lee, Hsin-HuaChen, Yi-ChunThe rich phase diagram of rhombohedral (R)-like and tetragonal (T)-like monoclinic polymorph in strained BiFeO3 (BFO) films brings on various functionalities. Finding correlations of physical ordering parameters in this system is generally difficult because T-like and R-like phases are undistinguishable in many aspects. In this study, the magnetic-coupled structural transitions of the mixed-phase BFO at low temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. To resolve the complexity resulted from the similarity between T-like and R-like phases, we analyzed the Raman spectra on a micro-scale region with various T/R ratios, which is in situ manipulated by an AFM tip carrying a dc bias. Phonons of T-like and R-like phases were thus successfully separated. Based on temperature-dependent XRD and resolved Raman spectra, we observed two isostructural transitions at around 225 K and 150 K, and they are strongly correlated with the magnetic ordering in the mixed-phase BFO film. Moreover, through the effective spin-lattice coupling, the evolution of the T/R polymorph is changed by the magnetic cooling process at low temperatures. This study provides a pathway to modulate phonon behaviors by magnetic fields in a highly strained system. (C) 2017 Author(s).Item type:Item, Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure through the Interface Engineering(2019-03-15) ;Yi, Di ;Yu, Pu ;Chen, Yi-Chun ;Lee, Hsin-HuaHe, QingElectric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.