Browsing by Author "Lee, Hsin-Yu"

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A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure
(2010-12-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage (V(oc)). The measured V(oc) is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm(2)). This V(oc) is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the V(oc) enhancement of MIS solar cells by using a stacking structure.
Characteristics of MIS Solar Cells Using Sputtering SiO(2) Insulating Layers
(2010-01-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
In this study, the characteristics of both p-type and n-ype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO(2) insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO(2) insulating layer and a hydrogen (H(2)) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO(2) insulating layer can be greatly enhanced by depositing a SiN(x) passivation layer on top. It suggests that a sputtering SiO(2) insulating layer is a good alternative insulating layer for MIS solar cells.
Characteristics of MIS Solar Cells Using Sputtering SiO2 Insulating Layers
(2010-01-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
In this study, the characteristics of both p-type and n-ype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H-2) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.