Browsing by Author "Lee, Hung-Tse"

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A Method for Finding the Routes of Mazes
(2018-01-01)
Wu, Chang-Ming
;
Liaw, Der-Cherng
;
Lee, Hung-Tse
;
電控工程研究所
;
Institute of Electrical and Control Engineering
In this paper, we propose a potential modified route-searching algorithm to find all feasible paths in a new place which is like an unknown maze. The maze-like place is assumed to be a region constructed by grids and each grid is supposed to have at most four directions for moving. A searching algorithm is developed to accomplish the required tasks for patrolling every path in the new place. Based on the traditional depth-first graph traversal method, we build up a local-maze coordinate system to record the visited pathway. The main results of this paper will give an experiment simulation to demonstrate the success of proposed design.
Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors
(2019-07-01)
Chang, Wei-Yuan
;
Chen, Wei-Zhong
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Lee, Hung-Tse
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Leu, Jihperng
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材料科學與工程學系
Low-k, carbon-rich SiCxNy films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiCxNy films with carbon bridges, namely ethylene bridges (Si-CH2-CH2-Si) and methylene bridges (Si-CH2-Si), which are readily formed and embedded with the Si-N(-C) matrix. A SiCxNy film of low k = 3.2 is achieved by successful incorporation of ethylene bridge embedded within the Si-N(-C-x) network by using a linear silazane precursor. Also, for these silazanes-deposited SiCxNy films at a fixed dielectric constant below 4.2, cyclic silazane, VSZ (1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane) produces films of higher film density and modulus, compared to those by a linear silazane precursor. (C) 2019 The Japan Society of Applied Physics