Browsing by Author "Lee, I. C."

Now showing 1 - 4 of 4

Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal Method
(2010)
Yang, P. Y.
;
Wang, J. L.
;
Tsai, W. C.
;
Wang, S. J.
;
Chen, P. C.
In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10(6), and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.
Growth and Field Emission Characteristics of Pillar-like Carbon Nanotubes Using Co-Ti/Al Co-deposited Catalysts at Low Temperature
(2010)
Chang, C. T.
;
Lee, C. Y.
;
Lin, K. C.
;
Lai, R. L.
;
Tsai, Wan-Lin
In this essay, the pillar-like CNT field emission arrays synthesis with co-deposited catalysts at low temperature (550 degrees C) was proposed. Pillar-like CNT has been successfully synthesized by thermal CVD system. The current density of this proposed pillar like CNTs was as high as 1272 mu A/cm(2) at 6 V/mu m and the turn-on field was 3.6 V/mu m. Additionally, the reliability was more stable as lower than 7% degradation of initial current density.
Improved Field Emission Characteristics with different Electrode Materials by forming process in a Quasi-planar Thin Film Field Emission Diode
(2010-01-01)
Chang, C. T.
;
Hsu, Y. Y.
;
Lin, K. C.
;
Tsai, Wan-Lin
;
Chien, Yun-Shan
The essay was reported the different electrode materials in a quasi-planar thin film field emission diode by different forming process. The forming process causes an increased surface roughness of emitters or reduced the work function of the emitter and results in a higher field enhancement factor, which shows better field emission characteristics. The turn on voltage could from 15 V to 8 V and 6.5V with Co and Pd electrode at the emission current of 100 nA for samples.
UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature
(2009)
Yang, P. Y.
;
Lee, I. C.
;
Chang, C. T.
;
Lin, K. C.
;
Wang, J. L.
In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85 degrees C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.