Browsing by Author "Lee, J. W."

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The effect of hot-dipped aluminum coatings on Fe-8Al-30Mn-0.8C alloy
(2008-02-01)
Su, C. W.
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Lee, J. W.
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Wang, C. S.
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Chao, C. G.
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Liu, T. F.
The morphology and microstructure of an intermetallic layer formed on the surface of Fe-8Al-30Mn-0.8C alloy by hot-dip aluminization treatment have been examined in detail. The phases present in the coating are unambiguously identified by means of transmission electron microscopy. After alummization, a two layer coating was formed consisting of an external Al layer and a (Fe, Mn)(2)Al-5 intermetallic on top of the substrate. The (Fe,Mn)(2)Al-5 compound has an orthorhombic structure with lattice parameters a = 0.752 nm, b = 0.667 nm and c = 0.417 nm. The activation energy (E-FeMnAl) for the growth of such an intermetallic layer is calculated to be 52.7 kJ/mol. These results are different from those observed in aluminized low-carbon steel (E-Fe). The difference between E-FeMnAl and E-Fe is attributed to the alloying elements (Mn) in the present alloy. Environmental salt fog corrosion and high temperature oxidation tests were carried out to examine the corrosion and oxidation resistance. The results indicated that both the corrosion and oxidation resistance of the Fe-8Al-30Mn-0.8C alloy treated by hot-dip aluminization can be significantly increased. (C) 2007 Elsevier B.V. All rights reserved.
The Guideline on Designing Face-tunneling FET for Large-scale-device Applications in IoT
(2017-01-01)
Hsieh, E. R.
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Lee, J. W.
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Lee, M. H.
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Chung, Steve S.
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電子工程學系及電子研究所
A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its I-on current. This work shows Ion of f-TFET with one-order magnitude Ion enhancement than that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However. from experimental results, S.S. of f-TFET is a little worse than that of control and shows strong dependency on temperature because of dominance of trap-assisted tunneling. To understand how traps affect I-on of f-TEFT, the charge-pumping measurement is utilized to examine trap distributions in the tunneling region. The results show that the channel/source interfacial traps degrade the performance of f-TFET, however, with careful treatment of the epi-process of f-TFET, this device with face-tunneling shows great potential for future IoT applications.