Browsing by Author "Lee, L"

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Characteristics of deep levels in As-implanted GaN films
(2002-09-02)
Lee, L
;
Lee, WC
;
Chung, HM
;
Lee, MC
;
Chen, WH
Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics.
Dependence of deep level concentrations on ammonia flow rate in n-type GaN films
(2002-08-01)
Lee, L
;
Chang, FC
;
Chung, HM
;
Lee, MC
;
Chen, WH
Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at E(C)-0.569 +/- 0.003 and E(C)-1.013 +/- 0.091 eV, were detected in this study. When the NH(3) flow rate was increased, we observed a slight increase in trap concentration of the E(C)-0.569 eV defect and a significant increase at E(C)-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of E(C)-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.
Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors
(2004-06-15)
Ke, WC
;
Huang, HY
;
Ku, CS
;
Yen, KH
;
Lee, L
The self-organized GaN dot structure is successfully grown on a slightly lattice-mismatched Al0.11Ga0.89N epilayer using flow-rate modulation epitaxy (FME) growth technique. From the variation of dot density with growth temperature, we can observe that the GaN dot growth is controlled predominately by the surface diffusion of Ga adatoms at substrate temperatures below 915degreesC and by re-evaporation at higher temperatures. Because of the special alternating gas supply feature in FME, during the Ga source step, it is the Ga metal that is deposited on the underlying Al0.11Ga0.89N layer. This is because of the large lattice mismatch of 41.8% between the Ga metal (4.51 Angstrom) and Al0.11Ga0.89N (3.18 Angstrom). We consider that the GaN dot growth in our study is mainly through the Volmer-Weber growth mode, not the commonly used Stranski-Krastanow growth mode.
LOG filter based inspection of cluster Mura and vertical-band Mura on liquid crystal displays
(2005)
Chen, HC
;
Fang, LT
;
Lee, L
;
Wen, CH
;
Cheng, SY
In this paper, we propose the use of Laplacian of Gaussian (LOG) filters in the detection of Cluster Mura defects and Vertical-Band Mura defects on Liquid Crystal Displays. To detect Cluster Mura defects, 2-D LOG filters with their shapes matching the shapes of Cluster Mura are adopted. The optimal threshold for the detection of Cluster Mura is determined based on the SEMU formula. On the other hand, to detect Vertical-Band Mura, a 1-D LOG filter is used over the projected I-D intensity profile to check if the variation tendency of the intensity profile is changed. The portions with inconsistently intensity variation are regarded as the portions where V-Band Muras occur. The simulation results demonstrate the LOG filters are very useful in the detection of Mura defects.
Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films
(2004-10-11)
Ke, WC
;
Ku, CS
;
Huang, HY
;
Chen, WC
;
Lee, L
The spatial variation of the optical properties of hillocks in Al0.11Ga0.89N films has been studied by using microphotoluminescence (mu-PL) microscopy. The mu-PL spectrum revealed a strong emission (I-H) at 351 nm from the hillock, besides the near-band-edge emission (I-nbe) at 341 nm. Moreover, the I-H intensity increases significantly and its full width at half maximum decreases from similar to76 to similar to53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent mu-PL, measurements showed that the I-H also has the S-shape behavior with a transition temperature of similar to120 K which is lower than that of I-nbe. The redshift of I-H is also smaller than I-nbe. Both indicated that the Al composition in hillocks is lower than the surrounding area. (C) 2004 American Institute of Physics.