Browsing by Author "Lee, LY"

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Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation
(2002-04-01)
Chao, TS
;
Lee, LY
;
電子物理學系
;
Department of Electrophysics
Nitrogen implantation was used to improve the performance of Ni-salicide process for n-type metal oxide semiconductor field effect transistors (MOSFETs). It is found that the driving current and transconductance of nMOSFETs increase with the nitrogen implantation. The hot carrier degradation of the nMOSFETs is significantly reduced as the nitrogen dosage increases.
Reduction of nickel-silicided junction leakage by nitrogen ion implantation
(2002-02-01)
Chao, TS
;
Lee, LY
;
電子物理學系
;
Department of Electrophysics
Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts.