Browsing by Author "Lee, Lurng-Shehng"

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Cerium oxide nanocrystals for nonvolatile memory applications
(2007-12-24)
Yang, Shao-Ming
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Chien, Chao-Hsin
;
Huang, Jiun-Jia
;
Lei, Tan-Fu
;
Tsai, Ming-Jinn
The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO(2) film on the SiO(2) tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO(2) nanocrystals embedded in SiO(2) are estimated to be about 8-10 nm and (3-7)x10(11)/cm(-2) after a high-temperature annealing with different ambients on 900 degrees C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications. (c) 2007 American Institute of Physics.
High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
(2008)
Yang, Shao-Ming
;
Huang, Jiun-Jia
;
Chien, Chao-Hsin
;
Taeng, Pei-Jer
;
Lee, Lurng-Shehng
This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
(2014-04-01)
Tsui, Bing-Yue
;
Cheng, Jung-Chien
;
Lee, Lurng-Shehng
;
Lee, Chwan-Ying
;
Tsai, Ming-Jinn
The fabrication processes, electrical characteristics, and reliability of the Schottky barrier diodes (SBDs) on an n-type 4H-silicon carbide (SiC) substrate are investigated. To modulate the Schottky barrier height (SBH), titanium dioxide (TiO2) is inserted at the interface between the metal and the SiC substrate. Ni, Mo, Ti, and Al are chosen to form SBDs. The maximum SBH modulation of 0.3 eV is obtained with a 5-nm-thick TiO2 layer. The SBH pinning factors of the SBDs without TiO2 insertion and with 2-nm-thick TiO2 insertion are similar. Therefore, the mechanism of the SBH modulation is attributed to the interface dipole-induced potential drop. Finally, the reliability of the SBD with TiO2 insertion is evaluated. The SBH, ideality factor, and reverse leakage current are stable after high forward current stress at 300A/cm(2) for 15000 s. This work provides a simple method to modulate the SBH on SiC and is feasible for SBD application. (C) 2014 The Japan Society of Applied Physics