Browsing by Author "Lee, M. D."

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A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability
(2007-01-01)
Ho, ChiaHua
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Lai, E. K.
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Lee, M. D.
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Pan, C. L.
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Yao, Y. D.
WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
Endurance study of switching characteristics in NiO films
(2007-03-01)
Lee, M. D.
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Lo, C. K.
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Peng, T. Y.
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Chen, S. Y.
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Yao, Y. D.
Bi-stable switching effect has been studied in nickel oxide. lms with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory. (C) 2006 Elsevier B.V. All rights reserved.
Epitaxial layer of MgO (001) grown on Si(001)wafer by e-beam evaporation
(2006-09-01)
Lee, M. D.
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Lo, C. K.
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Peng, T. Y.
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Yau, K. L.
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Chen, S. Y.
MgO(0 0 1) has been growing successfully on Fe/Pd/Cu/Si(1 0 0) by e-beam evaporation as examined by X-ray diffraction and high resolution transmission microscope. We present the magnetic peculiarity of crystal structure Fe(0 0 1)/Pd(0 0 1)/Cu(0 0 1) on Si(0 0 1) substrate. The magnetic properties of the sample were measured by magneto-optical Kerr effect which shows an in-plane magnetocrystalline anisotropy. (C) 2006 Elsevier B. V. All rights reserved.