Browsing by Author "Lee, MY"

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Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
(2004-09-01)
Zous, NK
;
Lee, MY
;
Tsai, WJ
;
Kuo, A
;
Huang, LT
The negative threshold voltage (V-t) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this V-t shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced V-t shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative V-t drift is proposed.