Browsing by Author "Lee, Ming-Daou"

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A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stability
(2007)
He, ChiaHua
;
Lee, Ming-Daou
;
Pan, Chen-Ling
;
Lai, Erb-Kun
;
Yao, Yeong-Der
We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WO, film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimentioanl nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device.
CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO(2)-SiO(2) Hybrid Resistive-Switching Material
(2011-03-01)
Lee, Ming-Daou
;
Ho, ChiaHua
;
Yao, Yeong-Der
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO(2)-SiO(2), in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO(2) based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO(2) layer between the bottom electrode and TiO(2) film to enhance the Schottky barrier height, while maintaining TiO(2) based RRAM characteristics.
CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO2-SiO2 Hybrid Resistive-Switching Material
(2011-03-01)
Lee, Ming-Daou
;
Ho, ChiaHua
;
Yao, Yeong-Der
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO2-SiO2, in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO2 based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO2 layer between the bottom electrode and TiO2 film to enhance the Schottky barrier height, while maintaining TiO2 based RRAM characteristics.
Effect of oxygen concentration on characteristics of NiOx-based resistance random access memory
(2007-02-01)
Lee, Ming-Daou
;
Ho, Chia-Hua
;
Lo, Chi-Kuen
;
Peng, Tai-Yen
;
Yao, Yeong-Der
The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.