Browsing by Author "Lee, Ruey-Bor"

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Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess
(2016)
Lin, Yen-Ku
;
Noda, Shuichi
;
Lee, Ruey-Bor
;
Huang, Chia-Ching
;
Quang Ho Luc
An enhancement- mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement- mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.