Browsing by Author "Lee, SD"

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Anti-reflection strategies for sub-0.18-mu m dual damascene structure patterning in KrF 248nm lithography
(1999)
Chou, SY
;
Wang, CM
;
Hsia, CC
;
Chen, LJ
;
Hwang, GW
Finding high performance and low cost anti-reflection strategies is a common goal for all photolithographers. This task is getting tough for dual damascene process than the metal-etch process because the oxide thickness variation enhances the thin film interference effect. In this paper, different ARC strategies using organic and inorganic material were examined to compare their CD control performance in sub-0.18 mu m dual damascene structure for KrF 248nm lithography. The organic bottom ARC (BARC) achieves reflectivity control through modulating its thickness. The first and second minimal points in BARC swing curve were chosen as the film thickness to be evaluated. The inorganic ARC, which referred to dielectric ARC (DARC) using PECVD silicon oxynitride (SiOxNy) in this article, was investigated with single layer and double layer structures. The double-layer DARC structure consists of two layers with different extinction coefficient K values. The optimal refractive index (N, K) and thickness of each ARC structure were calculated from some available photolithography simulators. A PECVD process for DARC growth chat provides easily tunable range of refractive index and thickness was established to meet the DW process requirement fr om simulation. The performances of each ARC structure were evaluated on patterning 0.18 mu m trench and 0.20 mu m via in back-end-of-line (BEOL) dual damascene process. It showed that the double-layer DARC provided the most effective CD control ability among these ARC structures. The double-layer DARC should be one of the most potential candidates for sub-0.18 mu m dual damascene process.
Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection
(2002)
Fang, KL
;
Tsui, BY
;
Yang, CC
;
Chen, MC
;
Lee, SD
The electrical and material stability of a newly developed CVD ultra low-k dielectric material called Orion, is explored. It has a dielectric constant of less than 2.2 with excellent thermal stability up to 600degreesC. It shows very low leakage current of only 1nA/cM(2) at 2.5MV/cm. Although both Al and Cu ions can be driven into Orion easily, no metal ions are observed in the Orion with a TAN gate. The Orion material also shows very good adhesion with TaN and oxide hardmask. The current transport mechanism and electrical reliability were investigated. Although weak dielectric polarization occurs under bias-temperature stress, Orion is a very promising material for next generation Cu-interconnect technology.
Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect
(2001)
Fang, KL
;
Tsui, BY
;
Yang, CC
;
Lee, SD
;
電子工程學系及電子研究所
The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SIC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical filed and electron injection at Low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time dependent dielectric breakdown (TDDB) lifetime becomes worse at high nitrogen content. It is suggested that the SiC deposition can be optimized at moderate nitrogen content to compromise all film properties.
Surface-processing-enhanced copper diffusion into fluorosilicate glass
(2001-11-01)
Tsui, BY
;
Fang, KL
;
Lee, SD
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigated copper diffusion into processed fluorosilicate glass (FSG). It is observed that the surface process enhances the flatband voltage shift of the Cu/FSG/Si capacitor structure under bias-temperature stress. Secondary-ion mass spectroscopy analysis confirmed that the flatband voltage shift was due to Cu diffusion into the FSG film. Thermal desorption spectrometer analysis indicated that the surface damage layer took up more moisture. A surface-damage-layer-enhanced Cu ionization model was then proposed to explain the observation. The investigation concludes that the diffusion of Cu into FSG is strongly dependent on the surface condition of the FSG film. The proposed model also provides explanation for the inconsistent results reported in previous literature. (C) 2001 The Electrochemical Society.