Browsing by Author "Lee, Shang-Fan"
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Item type:Item, GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity(2019-08-28) ;Chang, Shu-Jui ;Chung, Ming-Han ;Kao, Ming-Yi ;Lee, Shang-FanYu, Yi-HsingMultiferroic materials are strong candidates for reducing the energy consumption of voltage-controlled spintronic devices because of the coexistence of ferroelectric (FE) and magnetic orders in a single phase. In this article, we present a new multiferroic perovskite, GdNixFe1-xO3 (GFNO), produced via sputtering on a SrTiO3 substrate. The proposed GFNO is FE and canted antiferromagnetic (AFM) within a monoclinic framework at room temperature. The FE polarization of the GFNO is up to 37 mu C/cm(2). When capped with a Co layer, the resulting heterostructure exhibits voltage-controlled magnetism (VCM). The heterostructured device exhibits two distinct features. First, its VCM depends on the magnitude as well as the polarity of the applied bias, thereby doubling the number of available magnetic readout states under a fixed voltage. Furthermore, the magnetic order of the device can be controlled very effectively within +/- 1 V. These two characteristics satisfy the requirements for low-power and high-storage technology. Theoretical analysis and experimental results indicate the importance of Ni dopant in regulating the polarity-dependent multiferroicity of this gadolinium ferrite system.Item type:Item, Magnetic and Metal Binding Structural Analysis of Mn,Zn-Metallothionein-Green Fluorescence Fusion Protein(2012-01-31) ;Chen, Ting-Kai ;Lin, Yin-Chih ;Chen, Yu-Chen ;Chen, Yen-LinTseng, Wei-LunItem type:Item, Magnetic Mesocrystal-Assisted Magnetoresistance in Manganite(2014-11-01) ;Yang, Jan-Chi ;He, Qing ;Zhu, Yuan-Min ;Lin, Jheng-CyuanLiu, Heng-JuiMesocrystal, a new class of crystals as compared to conventional and well-known single crystals and polycrystalline systems, has captured significant attention in the past decade. Recent studies have been focused on the advance of synthesis mechanisms as well as the potential on device applications. In order to create further opportunities upon functional mesocrystals, we fabricated a self-assembled nanocomposite composed of magnetic CoFe2O4 mesocrystal in Sr-doped manganites. This combination exhibits intriguing structural and magnetic tunabilities. Furthermore, the antiferromagnetic coupling of the mesocrystal and matrix has induced an additional magnetic perturbation to spin-polarized electrons, resulting in a significantly enhanced magnetoresistance in the nanocomposite. Our work demonstrates a new thought toward the enhancement of intrinsic functionalities assisted by mesocrystals and advanced design of novel mesocrystal-embedded nanocomposites.Item type:Item, Mechanically tunable exchange coupling of Co/CoO bilayers on flexible muscovite substrates(2020-02-07) ;Thai Duy Ha ;Yen, Min ;Lai, Yu-Hong ;Kuo, Chang-YangChen, Chien-TeThe employment of flexible muscovite substrates has given us the feasibility of applying strain to heterostructures dynamically by mechanical bending. In this study, this novel approach is utilized to investigate strain effects on the exchange coupling in ferromagnetic Co and anti-ferromagnetic CoO (Co/CoO) bilayers. Two different Co/CoO bilayer heterostructures were grown on muscovite substrates by oxide molecular beam epitaxy, with the CoO layer being purely (111)- and (100)-oriented. The strain-dependent exchange coupling effect can only be observed on Co/CoO(100)/mica but not on Co/CoO(111)/mica. The origin of this phenomenon is attributed to the anisotropic spin re-orientation induced by mechanical bending. The strain-dependent magnetic anisotropy of the bilayers determined by anisotropic magnetoresistance measurements confirms this conjecture. This study elucidates the fundamental understanding of how magnetic exchange coupling can be tuned by externally applied strain via mechanical bending and, hence, provides a novel approach for implementing flexible spintronic devices.Item type:Item, Self-assembled molecular magnets on patterned silicon substrates(2006) ;Chang, Chia-Ching ;Sun, Kien-Wen ;Lee, Shang-Fan ;Kan, Lou-SingKuan, Chieh-HsiungThe paper reports the methods of preparing molecular magnets and pattering of the molecules on semiconductor surface. A highly magnetically aligned metallothionein containing Mn and Cd (Mn,Cd-MT-2) was first synthesized. Those molecules were then placed into nanopores prepared on silicon (001) surfaces using electron beam lithography and reactive ion etching techniques. We have observed self-assemble growth of those MT molecules on the patterned Si surface. The MT molecules have grown into rod or ring type nanostructures, depending on the patterned nanostructures on the surface. We also provide scanning electron microscopy (SEM) and atomic force microscopy (AFM) studied of those molecular nanostructures. This engineered molecule shows molecular magnetization and is biocompatible with conventional semiconductors. These features make Mn,Cd-MT-2 a good candidate for biological applications and sensing sources of new nano-devices.Item type:Item, Self-assembled molecular magnets on patterned silicon substrates: Bridging bio-molecules with nanoelectronics(2007-04-01) ;Chang, Chia-Ching ;Sun, Kien Wen ;Lee, Shang-Fan ;Kan, Lou-Sing生物科技學系The paper reports the methods of preparing molecular magnets and patterning of the molecules on a semiconductor surface. A highly magnetically aligned metallothionein containing Mn and Cd (Mn,Cd-MT-2) is first synthesized, and the molecules are then placed into nanopores prepared on silicon (001) surfaces using electron beam lithography and reactive ion-etching techniques. We have observed the self-assemble growth of the NIT molecules on the patterned Si surface such that the NIT molecules have grown into rod or ring type three-dimensional nanostructures, depending on the patterned nanostructures on the surface. We also provide scanning electron microscopy, atomic force microscopy, and magnetic force microscope studies of the molecular nanostructures. This engineered molecule shows molecular magnetization and is biocompatible with conventional semiconductors. These features make Mn,Cd-MT-2 a good candidate for biological applications and sensing sources of new nanodevices. Using molecular self-assembly and topographical patterning of the semiconductor substrate, we can close the gap between bio-molecules and nanoelectronics built into the semiconductor chip. (c) 2006 Elsevier Ltd. All rights reserved.Item type:Item, Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device(2017-03-23) ;Chang, Shu-Jui ;Chang, Po-Chun ;Lin, Wen-Chin ;Lo, Shao-HuaChang, Liang-ChunUsing x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.