Browsing by Author "Lee, Shean-Yih"

Now showing 1 - 3 of 3

Improving dielectric loss and enhancing figure of merit of Ba0.5Sr0.5Ti0.95Mg0.05O3 thin films doped by aluminum
(2008-03-15)
Lee, Shean-Yih
;
Chiou, Bi-Shiou
;
Lu, Horng-Hwa
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
The different Al contents effects of Ba0.5Sr0.5Ti0.95Mg0.05O3 (BSTM) thin films grown on Pt/TiN/SiO2/Si substrates in the crystallographic structure, surface morphology, dielectric constant, loss tangent, leakage current, and figure of merit were investigated. The BSTM films properties are studied as a function of Al content and have remarkable improvements including dielectric loss, leakage current, and figure of merit (FOM) as well as films grain sizes. With increasing Al content, the dielectric constant (k), tunability (T), loss tangent (tan delta), and leakage current density (J(L)) decrease while the FOM, defined as T/tan delta, and breakdown strength increases. The maximum dielectric constant at zero bias, tunability, dielectric loss, FOM, and leakage current density of 1 mol% Al-doped BSTM films at 280 kV cm(-1) are 248, 40%, 0.0093, 43, and 3.76 x 10(-7) A cm(-2), however, the same measured conditions of undoped BSTM films are 341, 54%, 0.0265, 20, and 1.19 x 10(-6) A cm(-2), respectively. The dc resistivity increases from 2.33 x 10(11) Omega cm of the BSTM film to 6.08 x 10(12) Omega cm of the 5 mol% Al-doped BSTM film at 280 kV cm(-1). In addition, the tolerance factor (t) of Al-doped BSTM perovskite thin films is 0.97 as compared to 0.87 of the undoped BSTM thin films. The increasing of tolerance factor value indicates that the specimens with Al-doped BSTM films are more stable than undoped specimens. (C) 2007 Elsevier B. V. All rights reserved.
Improving dielectric loss and thermal stability of CaCu(3)Ti(4)O(12) thin films by adding BST layer
(2008-01-01)
Lee, Shean-Yih
;
Chiou, Bi-Shiou
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
;
Department of Electronics Engineering and Institute of Electronics
The effects of adding a Ba(0.5)Sr(0.5)TiO(3) (BST) seeding layer of perovskite-based oxide CaCu(3)Ti(4)O(12) (CCTO) thin films grown on Pt/TiN/SiO(2)/Si (100) substrates on crystallographic structure, surface morphology, dielectric loss, leakage current, and thermal stability were investigated. Adding a BST seeding layer to the interface between CCTO/Pt structures has remarkable influences on CCTO thin-film properties, including dielectric properties, insulating characteristics, and the temperature coefficient of capacitance (TCC), as well as thin-film grain sizes. CCTO films with a 2 nm BST seeding layer showed smaller grain sizes than those specimens of CCTO films without a BST seeding layer. The dielectric loss, leakage current density, surface roughness, and thermal stability (TCC) of CCTO films with a 2 nm BST seeding layer were improved by about 23%, 1 order of magnitude at 360 kV/cm, 38%, and 61%, respectively, compared with that of CCTO films without a BST seeding layer. The correlations of material properties, such as dielectric loss, leakage current, surface roughness, and thermal stability properties, suggest that adding a 2 nm BST seeding layer to CCTO films capacitor structure is another optimal choice for metal-insulator-metal device applications. (C) 2008 The Electrochemical Society.
Improving dielectric loss and thermal stability of CaCu3Ti4O12 thin films by adding BST layer
(2008-01-01)
Lee, Shean-Yih
;
Chiou, Bi-Shiou
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
;
Department of Electronics Engineering and Institute of Electronics
The effects of adding a Ba0.5Sr0.5TiO3 (BST) seeding layer of perovskite-based oxide CaCu3Ti4O12 (CCTO) thin films grown on Pt/TiN/SiO2/Si (100) substrates on crystallographic structure, surface morphology, dielectric loss, leakage current, and thermal stability were investigated. Adding a BST seeding layer to the interface between CCTO/Pt structures has remarkable influences on CCTO thin-film properties, including dielectric properties, insulating characteristics, and the temperature coefficient of capacitance (TCC), as well as thin-film grain sizes. CCTO films with a 2 nm BST seeding layer showed smaller grain sizes than those specimens of CCTO films without a BST seeding layer. The dielectric loss, leakage current density, surface roughness, and thermal stability (TCC) of CCTO films with a 2 nm BST seeding layer were improved by about 23%, 1 order of magnitude at 360 kV/cm, 38%, and 61%, respectively, compared with that of CCTO films without a BST seeding layer. The correlations of material properties, such as dielectric loss, leakage current, surface roughness, and thermal stability properties, suggest that adding a 2 nm BST seeding layer to CCTO films capacitor structure is another optimal choice for metal-insulator-metal device applications. (C) 2008 The Electrochemical Society.