Browsing by Author "Lee, Sheng-Kai"

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Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
(2008-04-14)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Lee, Sheng-Kai
In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics.
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
(2007)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Weng, Chi-Feng
;
Liu, Hsin-Chou
The formation of germanium nanocrystals embedded in silicon-oxygen-nitride with distributed charge storage elements is proposed. A large memory window was observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after a high-temperature oxidized SiGeN layer. The Ge nanocrystals embedded in the SiON stack layer exhibited nonvolatile memory characteristics with the obvious threshold voltage shift under a bidirectional voltage sweep. Also, the manufacturing technology using the sequent high-temperature oxidation of the a-Si layer and the direct oxidation of the SiGeN layer is proposed, respectively, for the formation of a blocking oxide layer to enhance the performance of nonvolatile memory devices. The reliability characteristics, including retention time and endurance, are also advisable for the application of nonvolatile memory device. (c) 2007 The Electrochemical Society.