Browsing by Author "Lee, Tsin-Dong"

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Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
(2007-06-01)
Yang, Hung-Pin D.
;
Chen, I-Liang
;
Lee, Chen-Hong
;
Chiou, Chih-Hong
;
Lee, Tsin-Dong
We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
Single-mode 780 nm multi-leaf holey vertical-cavity surface-emitting lasers
(2007-01-01)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Yeh, Zao-En
;
Lai, Fang-, I
;
Lee, Tsin-Dong
A single-mode oxide-confined VCSEL with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode output power of over 1.1 mW has been achieved in the 780 nm range.
Single-mode 780 nm vertical-cavity surface-emitting lasers with multi-leaf holey structure
(2008)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Yeh, Zao-En
;
Lai, Fang-I
;
Lee, Tsin-Dong
A single-mode oxide-confined vertical-cavity surface-emitting laser (VCSEL) with multi-leaf holey structure for fiber-optic applications is demonstrated. The optical con. nement was done by a multi-leaf holey structure. The deep etched leaf holes were used to provide better mode confinement and suppression of higher order modes. Single fundamental mode continuous-wave output power of over 1.1mW has been achieved in the 780nm range, with a threshold current of approximately 0.9 mA. Side-mode suppression ratio (SMSR) larger than 24 dB has been measured.