Browsing by Author "Lee, W."

Now showing 1 - 5 of 5

Electric field-controlled transformation of the eigenmodes in a twisted-nematic Fabry-Perot cavity
(2018-11-15)
Gunyakov, V. A.
;
Timofeev, I., V
;
Krakhalev, M. N.
;
Lee, W.
;
Zyryanov, V. Ya
The polarized optical states in the transmission spectrum of a twisted-nematic Fabry-Perot cavity with the distinctly broken Mauguin's waveguide regime have been theoretically and experimentally investigated. Specific features of the electric field-induced transformation of the polarization and spectral characteristics of eigenmodes of the neighboring series at the overlap resonant frequencies have been examined. It is demonstrated that the linear polarizations of eigenmodes at the cavity boundaries remain nearly orthogonal and their frequency trajectories reproduce the avoided crossing phenomenon. The experimental data are confirmed analytically and by the numerical simulation of light transmission through the investigated anisotropic multilayer with the use of a Berreman matrix method. The results obtained can be generalized to any materials with the helix response.
High Content Nd-Fe-B in Polymer Composite by Fused Depo-sition Modeling
(2018-01-01)
Chang, T.
;
Jyun, J. K.
;
Lee, W.
;
Tsai, M.
;
Cheng, C.
Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
(2009-02-11)
Lee, W.
;
Su, P.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper systematically presents controlled single-electron effects in multiple- gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple- gate architecture. From the presented results, downsizing multiple- gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.
The natural history of type 1 spinal muscular atrophy in Taiwan
(2016-10-01)
Ou, S.
;
Jong, Y.
;
Ho, C.
;
Lee, W.
;
Lin, K.
The natural history of type 1 spinal muscular atrophy in Taiwan
(2016-10)
Ou, S.
;
Jong, Y.
;
Ho, C.
;
Lee, W.
;
Lin, K.