Browsing by Author "Lee, Y. T."

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Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
(2009-03-15)
Chiu, C. H.
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Kuo, S. Y.
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Lo, M. H.
;
Ke, C. C.
;
Wang, T. C.
A-plane In(x)Ga(1-x)N/GaN (x=0.09, 0.14, 0.24, and 0.3) multiple-quantum-wells (MQWs) samples, with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire substrates. Optical quality was investigated by means of photoluminescence (PL), cathodoluminescence, and time resolved PL measurements (TRPL). Two distinguishable emission peaks were examined from the low temperature PL spectra, where the high- and low-energy peaks were ascribed to quantum wells and localized states, respectively. Due to an increase in the localized energy states and absence of quantum confined Stark effect, the quantum efficiency was increased with increasing indium composition up to 24%. As the indium composition reached 30%, however, pronounced deterioration in luminescence efficiency was observed. The phenomenon could be attributed to the high defect densities in the MQWs resulted from the increased accumulation of strain between the InGaN well and GaN barrier. This argument was verified from the much shorter carrier lifetime at 15 K and smaller activation energy for In(0.3)Ga(0.7)N/GaN MQWs. In addition, the polarization-dependent PL revealed that the degree of polarization decreased with increasing indium compositions because of the enhancement of zero-dimensional nature of the localizing centers. Our detailed investigations indicate that the indium content in a-plane InGaN/GaN MQWs not only has an influence on optical performance, but is also important for further application of nitride semiconductors.
Photodissociation of 1,3,5-triazine: An ab initio and RRKM study
(2007-09-27)
Dyakov, Y. A.
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Mebel, A. M.
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Lin, S. H.
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Lee, Y. T.
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Ni, C.-K.
The ab initio/Rice-Ramsperger-Kassel-Marcus (RRKM) approach has been applied to investigate the photodissociation mechanism of 1,3,5-triazine at different wavelengths of the absorbed photon. Reaction pathways leading to various decomposition products have been mapped out at the G3(MP2,CC)//B3LYP level, and then the RRKM and microcanonical variational transition state theories have been applied to compute rate constants for individual reaction steps. Relative product yields (branching ratios) for the dissociation products have been calculated using the steady-state approach. The results show that, after being excited by 275, 248, or 193 nm photons, the triazine molecule isomerizes to an opened-ring structure on the first singlet excited-state potential energy surface (PES), which is followed by relaxation into the ground electronic state via internal conversion. On the contrary, excitation by 285 and 295 nm photons cannot initiate the ring-opening reaction on the excited-state PES, and the molecule relaxes into the energized ring isomer in the ground electronic state. The dissociation reaction starting from the ring isomer is calculated to have branching ratios of various reaction channels significantly different from those for the reaction initiating from the opened-ring structure. The existence of two distinct mechanisms of 1,3,5-triazine photodissociation can explain the inconsistency in the translational energy distributions of HCN moieties at different wavelengths observed experimentally.