Browsing by Author "Lee, YH"

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A two-level scheduling method: an effective parallelizing technique for uniform nested loops on a DSP multiprocessor
(2005-02-15)
Lee, YH
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Chen, C
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資訊工程學系
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Department of Computer Science
A digital signal processor (DSP), which is a special-purpose microprocessor, is designed to achieve higher performance on DSP applications. Because most DSP applications contain many nested loops and permit a very high degree of parallelism, the DSP multiprocessor has a suitable architecture to execute these applications. Unfortunately, conventional scheduling methods used on DSP multiprocessors allocate only one operation to each DSP every time unit, even if the DSP includes several function units that can operate in parallel. Obviously they cannot achieve full function unit utilization. Hence, in this paper, we propose a two-level scheduling method (TSM) to overcome this common failing. TSM contains two approaches, which integrates unimodular transformations, loop tiling technique, and conventional methods used on single DSP, Besides introducing algorithm, we also use an analytic module to analyze its preliminary performance. Based on our analyses the TSM can achieve shorter execution time and more scalable speedup results. In addition, the TSM causes less memory access and synchronization overheads, which are usually negligible in the DSP multiprocessor architecture. (C) 2004 Elsevier Inc. All rights reserved.
Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
(2001-11-01)
Pan, TM
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Lei, TF
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Ko, FH
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Chao, TS
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Chiu, TH
In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.
Impact of a large earthquake on a GPS network: The case of the 1999 Chi-Chi, Taiwan earthquake
(2002-04-01)
Kuo, LC
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Yu, SB
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Hsu, VJ
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Hou, CS
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Lee, YH
On 20 September 1999, Taiwan was hit by the largest inland earthquake (M-w = 7.6) in the last century resulting in an 80-kilometre thrust rupture almost directly along the existing Chelungpu fault. Here, we estimated the coordinates of the GPS stations by using the annual epoch-observed and permanent continuously-recorded GPS data covering the 1992-1999 period Taking into account the effects of secular motion and post-deformation, we calculated the corrected coseismic displacements. Relatively large coseismic displacements of 8-9 in in the horizontal and vertical components were found in the northern part of the fault. Stations on the hanging wall shifted horizonatly 2-9 in in the NW direction and decreased in magnitude from west to east. On the other hand, displacements on the footwall were less than 2 in in the SE direction hid increased from west to east. The size of the zone overlapping the hanging wall and the foowall showed a decrease of 796 ppm in 494 km(2). This is in direct contrast to areas near the fault which increased in size from 13 to 23 7 ppm. Significant postseismic deformations were also observed in data from the existing 44 permanent stations and 7 temporary stations. Additionally, large postseismic deformations of 10-20 cm were found at stations SUAM, 100 7 and YUSN within 10 months.
Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
(2001-01-01)
Chen, MJ
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Kang, TK
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Lee, YH
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Liu, CH
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Chang, YJ
For 3.3-nm thick gate oxide n-channel metal-oxide-semiconductor field-effect transistors subject to a stress gate voltage of 5.5 V, three distinct events are encountered in the time evolution of the gate current: stress-induced leakage current (SILC), soft breakdown (SBD), and hard breakdown (HBD). The localization of SBD and HBD paths, as well as their developments with the time, is determined electrically, showing random distribution in nature. At several stress times, we interrupt the stressing to measure the drain current low-frequency noise power S-id. As expected, S-id follows up the spontaneous changes at the onset of SBD and HBD. The S-id spectra measured in fresh and SILC mode are reproduced by a literature model accounting for the carrier number and surface mobility fluctuations in the channel, and, as a result, both preexisting and newly generated trap densities are assessed. The post-SBD S-id does originate from current fluctuations in the SBD percolation paths, which can couple indirectly to drain via underlying channel in series, or directly to drain if the SBD path is formed close to drain extension. In particular, a fluctuation in S-id itself in the whole SBD duration is observed. This phenomenon is very striking since it indeed evidences the dynamic percolation origin concerning the trapping-detrapping processes in and around the SBD paths. The subsequent HBD duration remarkably features a flat S-id, indicating the set-up of a complete conductive path prevailing over the trapping-detrapping processes. (C) 2001 American Institute of Physics.
Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP cleaning on poly-Si film
(2002-06-01)
Pan, TM
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Lei, TF
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Ko, FH
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Chao, TS
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Liaw, MC
The cleaning solutions augmented with tetraalkylammonium hydroxides (TAAHs) with various chain-lengths of hydrocarbon substituents were developed for post-poly-Si chemical mechanical polishing (CMP) cleaning. The cleaning performance with respect to particle, organic, and metal removal as well as surface roughness was evaluated for a series of 3% NH4H solutions dosed with 0.26 M of a TAAH and 100 ppm of ethylenediaminetetraacetic acid (EDTA). The experimental results demonstrated that the cleaning solutions enhanced with these surfactants (TAAH) and a chelating agent (EDTA) achieved significantly better removal efficiencies of particle and metal impurities than the control solution containing 3% NH4OH only. A conceptual model involving surface adsorption and double-layer formation was used to postulate the aqueous-phase surface interactions between the tetraalkylammonium cations and the poly-Si surface, and to explain the removal mechanisms of particle and metal impurities from the surface. The improved electrical properties (current density-electric field and charge-to-breakdown characteristics) of the post-CMP capacitor after cleaning further demonstrated the reliability and feasibility of the proposed cleaning recipes. (C) 2002 The Electrochemical Society.