Browsing by Author "Lee, Yueh-Ting"
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Item type:Item, Compact CPW-MS-CPW two-stage pHEMT amplifier compatible with flip chip technique in V-band frequencies(2008-02-01) ;Su, Jen-Yi ;Meng, Chinchun ;Lee, Yueh-Ting ;Huang, Guo-Wei電信工程研究所The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier employs transistors as the CPW-MS transition and the MS-CPW transition in the first stage and the second stage, respectively. The CPW-MS-CPW two-stage amplifier has a gain of 14.8 dB, input return loss of 10 dB and output return loss of 22 dB at 53.5 GHz. After the flip-chip bonding, the measured performances have almost the same value.Item type:Item, Dual-band adjustable and reactive I/Q generator with constant resistance for down- and up-converters(2008-08-01) ;Tseng, Sheng-Che ;Meng, Chinchun ;Lee, Yueh-Ting ;電信工程研究所Institute of Communications EngineeringAdjustable and reactive in-phase/quadrature (I/Q) generators with constant resistance are proposed for the first time in this paper with the properties of low loss, dual-band implementation, and high quadrature accuracy. The quadrature phase property and input matching of the I/Q generator can be achieved at all frequencies simultaneously by the constant-resistance I/Q generator. However, the magnitude balance of the dual-band T/Q generator is achieved at two designed frequencies. A 2.4/5.2-GHz I/Q down-converter and a 2.4/5.7-GHz single-sideband up-converter are fabricated using 0.35-mu m SiGe BiCMOS technology. The dual-band I/Q generator along with two single-to-differential amplifiers is integrated to provide differential quadrature local oscillator signals for dual-band mixers. The magnitude imbalance and phase error between the I and Q channels of the down-converter are < 1% and < 1 degrees, respectively, while the maximum sideband rejection ratio of the up-converter is up to 50 dB. Additionally, the operation bandwidth (sideband rejection ratio > 30 dB) is 200 MHz at 2.4 GHz and 720 MHz at 5.7 GHz.Item type:Item, Ka/Ku-Band pHEMT Gilbert Mixers With Polyphase and Coupled-Line Quadrature Generators(2009-05-01) ;Su, Jen-Yi ;Tseng, Sheng-Che ;Meng, Chinchun ;Wu, Po-YiLee, Yueh-TingIn this paper, three kinds of Ka/Ku-band Gilbert mixers are demonstrated using 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. Thanks to the semiinsulating GaAs substrate, microwave passive components have a low-loss feature, and polyphase filters work up to higher frequencies. Highly accurate tantalum-nitride thin-film resistors utilized in polyphase filters result in perfect quadrature operation. Therefore, our proposed single-sideband up-converter operates at 15 GHz with a 63-dB sideband rejection ratio, and another 34-GHz in-phase/quadrature (I/Q) subharmonic down-converter reaches <0.4-dB magnitude and < 1 degrees phase errors. More than 50-dB local oscillator (LO) leakage suppression is achieved in the I/Q subharmonic mixer. On the other hand, a 40-GHz stacked-LO subharmonic mixer with a novel compensation technique is also proposed and demonstrated to improve LO speed and reduce the amount of transistors, as compared to previous work.