Browsing by Author "Lee Kuen-Di"

Now showing 1 - 4 of 4

Oscillato based on a 6T SRAM for measuring the bias temperature instability
(2014-08-12)
Chuang Ching-Te
;
Jou Shyh-Jye
;
Hwang Wei
;
Tsai Ming-Chien
;
Lin Yi-Wei
The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.
Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability
(2013-08-29)
Chuang Ching-Te
;
Jou Shyh-Jye
;
Hwang Wei
;
Tsai Ming-Chien
;
Lin Yi-Wei
The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.
SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor
(2013-08-29)
CHUANG Ching-Te
;
Jou Shyh-Jye
;
Hwang Wei
;
Lin Yi-Wei
;
Tsai Ming-Chien
The present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up transistor and a first pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The gate of the second pull-up transistor is coupled with the gate of the second pull-down transistor, and the drain of the second pull-up transistor is coupled with the drain of the second pull-down transistor. The SRAM can measure the trip voltage, the read disturb voltage, and the write margin by controlling the first bit line, the second bit line, the GND, the first word line, and the voltage source without changing of the physic parameter of the SRAM.
Threshold voltage measurement device
(2013-11-12)
Chuang Ching-Te
;
Jou Shyh-Jye
;
Lin Geng-Cing
;
Wang Shao-Cheng
;
Lin Yi-Wei
A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.