Browsing by Author "Lee Wei-I"

Now showing 1 - 7 of 7

Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer
(2011-07-19)
Lee Wei-I
;
Chen Jenn-Fang
;
Chiang Chen-Hao
A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.
Method for smoothing group III nitride semiconductor substrate
(2013-09-24)
Lee Wei-I
;
Chen Kuei-Ming
;
Wu Yin-Hao
;
Yeh Yen-Hsien
The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.
Method for smoothing group lll nitride semiconductor substrate
(2012-07-19)
Lee Wei-I
;
Chen Kuei-Ming
;
Wu Yin-Hao
;
Yeh Yen-Hsien
The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.
Method for treating group III nitride semiconductor
(2013-10-22)
Lee Wei-I
;
Hsu Ying-Chia
;
Yeh Yen-Hsien
;
Chen Kuei-Ming
The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.
Method for treating group III nitride semiconductor
(2012-03-01)
Lee Wei-I
;
Hsu Ying-Chia
;
Yeh Yen-Hsien
;
Chen Kuei-Ming
The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.
Method for treating the dislocation in a GaN-containing semiconductor layer
(2013-04-16)
Lee Wei-I
;
Yeh Yen-Hsien
;
Wu Yin-Hao
;
Yu Tzu-Yi
A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.
METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER
(2013-04-25)
Lee Wei-I
;
Yeh Yen-Hsien
;
Wu Yin-Hao
;
Yu Tzu-Yi
A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.