Browsing by Author "Lei, Tan Fu"

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Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline silicon
(2007)
Lai, Chao Sung
;
Kao, Chyuan Haur
;
Lee, Chung Len
;
Lei, Tan Fu
;
電子工程學系及電子研究所
In this paper, we describe a simple technique to achieve a thin nitrided polyoxide film, only requiring an extra nitrogen implantation to be compatible with the floating gate nonvolatile memory process. The integrity of polyoxides is improved by using the through-silicon-gate nitrogen implantation. Nitridation can be achieved by implanting nitrogen into polysilicon gate followed by a high temperature annealing to drive the nitrogen atoms across the polysilicon, through the polyoxide, and to incorporate nitrogen at the polyoxide/polysilicon interface. The nitrogen-rich layer formed during the driven-in process not only strengthens the polyoxide structure but also improves the polyoxide quality. Improvements of electrical characteristics such as a low leakage current, a low electron trapping, and a high breakdown field for both positive and negative biases have been observed. (c) 2007 The Electrochemical Society.
Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
(2007)
Chen, Jian Hao
;
Huang, Tzung Bin
;
Wu, Xiaohua
;
Landheer, Dolf
;
Lei, Tan Fu
In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.