Browsing by Author "Leu, Chyi-Ming"

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Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature
(2012-01-01)
Yu, Ming-Jiue
;
Yeh, Yung-Hui
;
Cheng, Chun-Cheng
;
Lin, Chang-Yu
;
Ho, Geng-Tai
High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm(2)/V . s, the threshold voltage is - 1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10(5). The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.
Convalently bonded polyhedral oligomeric silsesquioxane/polyimide nanocomposites and process for synthesizing the same
(2006-06-08)
Wei, Kung-Hwa
;
Leu, Chyi-Ming
Polyhedral oligomeric silsesquioxane/polyimide nanocomposites with certain mechanical properties and low dielectric constant is synthesized by covalently tethering functionalized polyhedral oligomeric silsesquioxane molecules to polyimide. These nanocomposites appear to be self-assembled systems. A process for synthesizing said polyhedral oligomeric silsesquioxane/polyimide nanocomposites also is provided, comprising a step of forming porous type polyhedral oligomeric silsesquioxane, and a subsequent step of reacting with dianhydride or directly reacting with synthesized polyimide.
Covalently bonded polyhedral oligomeric silsesquioxane/polyimide nanocomposites and process for synthesizing the same
(2007-02-01)
Wei, Kuang-Hwa
;
Leu, Chyi-Ming
Polyhedral oligomeric silsesquioxane/polyimide nanocomposites with certain mechanical properties and low dielectric constant is synthesized by covalently tethering functionalized polyhedral oligomeric silsesquioxane molecules to polyimide. These nanocomposites appear to be self-assembled systems. A process for synthesizing said polyhedral oligomeric silsesquioxane/polyimide nanocomposites also is provided, comprising a step of forming porous type polyhedral oligomeric silsesquioxane, and a subsequent step of reacting with dianhydride or directly reacting with synthesized polyimide.
Covalently bonded polyhedral oligomeric silsesquioxane/polyimide nanocomposites and process for synthesizing the same
(2005-07-14)
Wei, Kung-Hwa
;
Leu, Chyi-Ming
Polyhedral oligomeric silsesquioxane/polyimide nanocomposites with certain mechanical properties and low dielectric constant is synthesized by covalently tethering functionalized polyhedral oligomeric silsesquioxane molecules to polyimide. These nanocomposites appear to be self-assembled systems. A process for synthesizing said polyhedral oligomeric silsesquioxane/polyimide nanocomposites also is provided, comprising a step of forming porous type polyhedral oligomeric silsesquioxane, and a subsequent step of reacting with dianhydride or directly reacting with synthesized polyimide.
Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates
(2012-07-01)
Lin, Chang-Yu
;
Chien, Chih-Wei
;
Wu, Chung-Chih
;
Yeh, Yung-Hui
;
Cheng, Chun-Cheng
In this paper, we had successfully implemented flexible top-gate staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on colorless and transparent polyimide (PI)-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The use of the selectively coated release layer between the nanocomposite PI film and the glass carrier ensured smooth debonding of the plastic substrate after TFT fabrication. The TFTs showed decent performances (with mobility > 10 cm(2)/V . s) either as fabricated or as debonded from the carrier glass. By bending the devices to different radii of curvature (from a flat state to an outward bending radius of 5 mm), influences of mechanical strains on the characteristics of flexible a-IGZO TFTs were also investigated. In general, the mobility of the flexible a-IGZO TFT increased with the tensile strain, whereas the threshold voltage decreased with the tensile strain. The variation of the mobility in a-IGZO TFTs versus the strain appeared smaller than those observed for amorphous silicon TFTs.
Ultrasensitivity of self-powered wireless triboelectric vibration sensor for operating in underwater environment based on surface functionalization of rice husks
(2019-06-01)
Lai, Sz-Nian
;
Chang, Chih-Kai
;
Yang, Cheng-Shiun
;
Su, Chun-Wei
;
Leu, Chyi-Ming
We demonstrate the self-powered wireless triboelectric vibration sensor as made from the naturally nanoporous SiO2 particles for allowing the detection of the vibrations and movement in the underwater environment. The nanoporous SiO2 particles are directly converted from the rice husks (referred to as RHsiO2), which exhibit strongly interacting surface hydroxyl groups. Through the enzymatic treatments, the surface potential of the RHsiO2 particles can be modulated to obtain either an extremely low or strongly high electronegativity. Specifically, by adding fluorinated groups using fluoroalkylsilane (FOTS) treatment to obtain RHsiO2-F, the charge density of the RHsiO2-F triboelectric nanogenerator (TENG) can be enhanced similar to 56.67-fold as compared to the untreated RHsiO2-TENG. The power density of the RHsiO2-F TENG is increased from 0.077 mWm(-2) to 261 mWm(-2). The RHsiO2-F particles are encapsulated in a quartz cube to fabricate a self-powered wireless sensor that can be stabilized for operating in an underwater environment at various temperatures. The theoretical calculation further demonstrates that the triboelectric potential is dramatically established between the surface functionalized RHsiO2-F particles and the quartz's surface. With porous nature of rice husks covered with nano-Si is of a high functionality for designing a new-type TENG which has a great potential to apply in the environmental monitoring.