Browsing by Author "Li, A"

Now showing 1 - 3 of 3

High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser
(2006-07-01)
Su, KW
;
Huang, SC
;
Li, A
;
Liu, SC
;
Chen, YF
We report a room-temperature high-peak-power AlGaInAs 1.36 mu m TEMOO laser pumped by a diode-pumped actively Q-switched Nd:YAG 1.06 mu m laser. With an average pump power of 1.0 W, an average output power of 140 mW was obtained at a pulse repetition rate of 10 kHz. With a peak pump power of 8.3 kW, the highest peak output power was 1.5 kW at a pulse repetition rate of 5 kHz. (c) 2006 Optical Society of America.
InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm
(2005-06-15)
Su, KW
;
Lai, HC
;
Li, A
;
Chen, YF
;
Huang, KE
We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America
InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers
(2005-03-01)
Lai, HC
;
Li, A
;
Su, KW
;
Ku, ML
;
Chen, YF
Received August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of America