Browsing by Author "Li, A."

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AlGaInAs quantum-well 1.3-mu m laser by a diode-pumped actively Q-switched Nd : GdVO4 laser - art. no. 68712K
(2008)
Huang, S. C.
;
Su, K. W.
;
Li, A.
;
Liu, S. C.
;
Chen, Y. F.
We report a high-peak-power AlGaInAs 1.36-mu m vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-mu m laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.
AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser
(2007-06-01)
Huang, S. C.
;
Liu, S. C.
;
Li, A.
;
Su, K. W.
;
Chen, Y. F.
We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 mu m laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained. (c) 2007 Optical Society of America.
AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laser
(2009-03-01)
Huang, S. C.
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Chang, H. L.
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Su, K. W.
;
Li, A.
;
Liu, S. C.
An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser
(2009-03-01)
Huang, S. C.
;
Chang, H. L.
;
Su, K. W.
;
Li, A.
;
Liu, S. C.
An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
High-peak-power passively Q-switched Nd : YAG laser at 946 nm
(2008-06-01)
Huang, Y. P.
;
Su, K. W.
;
Li, A.
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Chen, Y. F.
;
Huang, K. F.
We demonstrate a high-peak-power quasi-continuous-wave diode-pumped passive Q-switched Nd:YAG laser at 946 nm. We make a thorough comparison of the output performance between the saturable absorbers of InGaAs quantum wells (QWs) and a Cr4+:YAG crystal. Experimental results reveal that the saturable absorber of InGaAs QWs is superior to the Cr4+:YAG crystal because of the low nonsaturable losses and leads to a pulse energy of 330 mu J with a peak power greater than 11 kW.
InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
(2006-09-01)
Li, A.
;
Liu, S. C.
;
Su, K. W.
;
Liao, Y. L.
;
Huang, S. C.
We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.
Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser
(2010)
Su, K. W.
;
Chen, Yi-Fan
;
Huang, S. C.
;
Li, A.
;
Liu, S. C.
We report a low-temperature 1.3 mu m AlGaInAs quantum-well laser pumped by a 1.06 mu m active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.
Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser
(2007-09-01)
Huang, Y. P.
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Liang, H. C.
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Huang, J. Y.
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Su, K. W.
;
Li, A.
lnGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 mu J at a pulse repetition rate of 55 kHz. (c) 2007 Optical Society of America.