Browsing by Author "Li, C. W."

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<bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold>
(2006)
Gu, S. H.
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Li, C. W.
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Wang, Tahui
;
Lu, W. P.
;
Chen, K. C.
Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations.
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
(2007)
Tang, Chun-Jung
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Li, C. W.
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Wang, Tahui
;
Gu, S. H.
;
Chen, P. C.
A new program disturb in a buried diffusion bit-line SONOS array is observed as a bit-line width is reduced. A multi-step Monte Carlo simulation is performed to explore the disturb mechanism. We find that the V, shift of a disturbed cell is attributed to impact ionization-generated secondary electrons in a neighboring cell when it is in programming. The effects of substrate bias, bit-line dimension and pocket implant on the program disturb are characterized and evaluated by a Monte Carlo simulation.
Simulation on Optical Stimulated Luminescence Based on Two Competition Trap Model
(2009)
Hsieh, C. W.
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Li, C. W.
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Jong, T. L.
;
Chen, K. B.
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電子物理學系
This study discussed the optical pumping effects by two trapped electrons competition in optical stimulated luminescence processes. In simulation, quantum probability concept was recruited as the criterion of pumping electron mechanism and the optical luminescence properties could be obtained by solving the dynamics equations. The result not only indicated the optically stimulated luminescence which was dominantly affected by initial trapped concentration, trapped energy levels, the profile of pumping photon energy but predicted the optically stimulated luminescence material\'s behavior in clean-down electrons process.