Browsing by Author "Li, Cheng-Hua"

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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment
(2011-12-26)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Wang, Chia-C.
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO(2) (SCCO(2)) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO(2) treatment. The defect of nickel-doped silicon oxide (Ni:SiO(x)) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiO(x) film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO(2) for Ni:SiO(x) by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
(2011-12-26)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Wang, Chia-C.
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
The Effect of Silicon Oxide Based RRAM with Tin Doping
(2012)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Chuang, Siang-Lan
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. But silicon oxide cannot be used as resistance random access memory (RRAM) due to its native electrical properties. In this work, based on the concept of inducing defect by metal doping into insulator, silicon oxide with a few tin dopants at room temperature can successfully be used as switching layer in RRAM. According to electrical analyses, the current transport mechanism in Sn-doped silicon oxide is governed by Pool-Frenkel emission, which demonstrates the conduction path in the RRAM guided by Sn doping induced defect. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013203esl] All rights reserved.
The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
(2012)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Liao, Kuo-Hsiao