Browsing by Author "Li, F. L."

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A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded Applications
(2018-01-01)
Cheng, H. W.
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Hsieh, E. R.
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Huang, Z. H.
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Chuang, C. H.
;
Chen, C. H.
A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named ReWritable One-time programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of-the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.
The Understanding of Gate Capacitance Matching on Achieving a High Performance NC MOSFET with Sufficient Mobility
(2019-01-01)
Chiang, C. K.
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Husan, P.
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Lou, Y. C.
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Li, F. L.
;
Hsieh, E. R.
We develop experimental approaches to quantitatively extract the negative capacitance of MIM in a gate stacked NCFET. It was found that the NC effect is highly dependent on the grain and dipole behaviors with different annealing temperature. Also, to achieve a better design of high-performance NCFET, we explore not only the capacitance matching between ferroelectric HZO MIM and MOSFET but also how effective mobility is affected by HZO dipoles. For capacitance matching, we observe a 50x enhancement of overall gate capacitance triggered by NC effect, while, however, it adversely generated the degradation of the mobility. This mobility degradation is induced by the remote scattering from the ferroelectric HZO dipoles. Fortunately, if suitable polarization can be formed to align the HZO dipoles, the effects of remote scattering can be mitigated. From a trade-off between gate capacitance and the mobility, an NCFET with desirable performance can be achieved.