Browsing by Author "Li, Fang-Ming"

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Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
(2013-09-01)
Lin, Yueh-Chin
;
Chang, Chih-Hsiang
;
Li, Fang-Ming
;
Hsu, Li-Han
;
Chang, Edward Yi
The TiN/Cu metal scheme as gate metal for AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated. The copper-gated devices show comparable DC characteristics to the conventional Ni/Au-gated devices. No obvious of changes in I-DS and I-GS were observed for the device after being stressed at V-DS = 200 and V-GS = -5 V for 32 h. The thermal stability test indicates comparable Schottky barrier height for the TiN/Cu gate metal on GaN before and after 250 degrees C annealing for 1 h. Overall, the AlGaN/GaN HEMT with the TiN/Cu gate metal structure demonstrates excellent device DC characteristics, good thermal stability, and stable performance after a high-voltage stress test. (c) 2013 The Japan Society of Applied Physics
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
(2015-12-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Li, Fang-Ming
;
Shi, Wang-Cheng
;
Huang, Yu-Xiang
A GaN high-electron-mobility transistor (HEMT) with WN (x) /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN (x) /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250A degrees C for 1 h. These results demonstrate that the WN (x) /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.