Browsing by Author "Li, HH"

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A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
(1997-05-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime.
A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
(1997-05-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime.
A novel method for extracting the metallurgical channel length of MOSFET's using a single device
(1996-03-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.
Order parameter of MgB2: A fully gapped superconductor
(2001-10-15)
Yang, HD
;
Lin, JY
;
Li, HH
;
Hsu, FH
;
Liu, CJ
We have measured the low-temperature specific heat C(T) for polycrystalline MgB2 prepared by high pressure synthesis. C(T) below 10 K vanishes exponentially, which unambiguously indicates a fully opened superconducting energy gap. However, this gap is found to be too small to account for T, of MgB2. Together with the small specific heat jump DeltaC/gamma T-n(c) = 1.09, scenarios such as anisotropic s-wave or multicomponent order parameter are called for. The magnetic field dependence of gamma (H) is neither linear for a fully gapped s-wave superconductor nor H-1/2 for nodal order parameter. It seems that this intriguing behavior of gamma (H) is associated with the intrinsic electronic properties other than flux pinning.