Browsing by Author "Li, Huai-An"

Now showing 1 - 4 of 4

A Near-Zero Cross-Regulation Single-Inductor Bipolar-Output (SIBO) Converter with an Active-Energy-Correlation Control for Driving Cholesteric-LCD
(2011)
Lee, Yu-Huei
;
Fan, Ming-Yan
;
Chen, Wei-Chung
;
Chen, Ke-Horng
;
Liu, Sheng-Fa
A near-zero cross-regulation (near-zero CR) single-inductor bipolar-output (SIBO) converter with an adaptive-energy correlation (AEC) control is proposed as a compact power management solution for driving cholesteric-LCD (Ch-LCD). The SIBO converter can provide a pair of positive and negative output voltages with only one external inductor for achieving the polarity reversion operation in Ch-LCD to obtain high-quality displays. The proposed AEC control decides energy distribution for bipolar outputs without any cross regulation through the embedded prediction function. The chip fabricated in a 0.25 mu m CMOS process demonstrates near-zero cross-regulation at bipolar outputs with 90% peak power conversion efficiency.
Black matrices surface treatment for color filters ink jet printing process
(2007)
Shin, You-Ru
;
Wu, Siang-Jhih
;
Cheng, Jung-An
;
Chen, Huang-Ming P.
;
Li, Huai-An
An inkjet printing process for color filter fabrication is one of key technologies for next generation processes. To prevent ink overflow from the black matrices (BM) bank, two effective surface pre-treatments were introduced in this study. The contact angle of chemical treatment and CFx plasma treatment can be increased from 12 to 52 degrees and 12 to 27 for red ink, respectively.
CMOS-Like Ambipolar Organic/Inorganic TFTs for AMLCD and AMOLED Applications
(2009)
Chu, Yi-Hsing
;
Wu, Gao-Ming
;
Chuang, Chiao-Shun
;
Yu, Wei-Kuan
;
Chen, Fang-Chung
Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In(2)O(3)Ga(2)O(3)-ZnO) have been fabricated on SiO(2)/p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.
Large area color filter fabrication by using ink-jet printing technology
(2008)
Wu, Siang-Jhih
;
Cheng, Jung-An
;
Chen, Huang-Ming P.
;
Shin, You-Ru
;
Shieh, Han-Ping D.
A novel ink jet printing process without additional photolithography process for large area color filter fabrication has been developed in this study. A 100x100 mm(2) model of 32" color filters was fabricated for evaluation. New developed RGB inks were able to achieve 73% NTSC standard with the thickness of R, G, and B films at 1.80, 1.90, and 1.80 pm, respectively. The overflow issue can be solved by surface pretreatments, and color inks formulation.