Browsing by Author "Li, Hui"

Now showing 1 - 6 of 6

Capacity of the Memoryless Additive Inverse Gaussian Noise Channel
(2014-12-01)
Li, Hui
;
Moser, Stefan M.
;
Guo, Dongning
;
交大名義發表
;
National Chiao Tung University
The memoryless additive inverse Gaussian noise channel model describing communication based on the exchange of chemical molecules in a drifting liquid medium is investigated for the situation of simultaneously an average-delay and a peak-delay constraint. Analytical upper and lower bounds on its capacity in bits per molecule use are presented. These bounds are shown to be asymptotically tight, i.e., for the delay constraints tending to infinity with their ratio held constant (or for the drift velocity of the fluid tending to infinity), the asymptotic capacity is derived precisely. Moreover, characteristics of the capacity-achieving input distribution are derived that allow accurate numerical computation of capacity. The optimal input appears to be a mixed continuous and discrete distribution.
Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
(2017-09-01)
Jheng, Li Sian
;
Li, Hui
;
Chang, Chiao
;
Cheng, Hung Hsiang
;
Li, Liang Chen
We report an investigation of the Schottky barrier height (SBH) of Ni/n-type Ge and Ni/n-type GeSn films that is annealed at a wide range of temperatures. Both voltage-and temperature-dependent current-voltage (I-V) measurements are performed. From the analysis of these nonlinear I-V traces, the SBH is found and the results shows that the SBH of Ni/n-type GeSn (a) is smaller than that of Ni/n-type Ge and (b) decreases with the Sn content of the surface GeSn layer associated with the thermal annealing. By modeling the composition-and strain-dependent energy bandgap (E-g), the relationship between the SBH and Eg is established and it is found that SBH/E-g similar to 0.8. These results suggest that the GeSn film could serve as an interfacial layer for the reduction of the SBH in Ge-based electronic devices that are desirable for applications. (C) 2017 Author(s).
Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy
(2017-07-05)
Susanto, Iwan
;
Tsou, Tsung-Han
;
Yang, Zu-Po
;
Lee, Chao-Yu
;
Li, Hui
High-quality GaN films grown on 4H-SiC (0001) substrate with 4 of miscutting orientation have been done by plasma-assisted molecular beam epitaxy with different N/Ga flux ratio. The effect of N/Ga flux ratio on the surface morphology, chemical composition, structural and optical properties was systematically investigated. The observations of in-situ reflective high-energy electron diffraction demonstrated the special surface of SiC substrate and GaN growth transition from two-to three-dimension depending on N/Ga flux ratio. In the Ga-rich condition for epitaxy, Ga droplets formed and the root mean square value of surface roughness increased by the characterizations of scanning electron microscopy and atomic force microscopy which also related to the formation of the pits on the surface due to the accumulation of excess Ga on the surface. The better growth parameter of GaN films in the work is N/Ga flux ratio of 28 at substrate temperature 700 degrees C. Its surface oxide and charge-compensated surface state associated with defects are minimized from the surface composition analysis of X-ray photoelectron spectroscopy. In the structural characterization of high-resolution X-ray diffraction, the value of full width at half maximum and density of threading dislocation are lower to prove the high-quality structure of GaN film grown at N/Ga flux ratio of 28. Finally, the photoluminescence analysis performed the narrow near-band-edge peak and yellow band, corresponding to the better quality of GaN films. In this report, high-quality GaN films on 4H-SiC (0001) with 4 of miscutting orientation have been demonstrated by the reduction of defect states via the different N/Ga flux ratio. N/Ga flux ratio not only influences the growth mechanism and surface morphology, but also the surface chemical composition, crystal quality and optical properties of GaN compound semiconductors. (C) 2017 Elsevier B.V. All rights reserved.
Specific and effective detection of anammox bacteria using PCR primers targeting the 16S rRNA gene and functional genes
(2020-09-10)
Yang, Yuchun
;
Li, Meng
;
Li, Hui
;
Li, Xiao-Yan
;
Lin, Jih-Gaw
Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04-01)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni's empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics
Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni\'s empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics