Browsing by Author "Li, Jyun-Han"

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HfO2 Trap Layer Nonvolatile Flash Memory on SiGe Channel
(2014-01-01)
Lin, Yu-Hsein
;
Li, Jyun-Han
;
You, Hsin-Chiang
;
Hong, Jin-Shi
;
Tsai, Wan-Ting
This paper study a novel nonvolatile memory by using HfO2 trapping layer on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it can increases the electron/hole injection and enhances the program/erase speed. This study compares the characteristics of HfO2 memories with different tunnel oxynitride thicknesses on epi-SiGe substrate. The results show that the nonvolatile memory has superior characteristics in terms of considerably large memory window, high speed program/erase, long retention time, good endurance for future low power applications.
High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process
(2016-01-01)
Hsu, Chung-Chun
;
Tsai, Yi-He
;
Chen, Che-Wei
;
Li, Jyun-Han
;
Lin, Yu-Hsien
We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Phi(Bn)) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10(5) at the applied voltage of vertical bar V-a vertical bar = 1 V. Our quantum-well pMOSFET exhibited a high I-ON/I-OFF ratio of similar to 10(7) (I-S) and a moderate subthreshold swing of 166 mV/decade.