Browsing by Author "Li, K. C."

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A Comprehensive Transport Model for High Performance HEMTs Considering the Parasitic Resistance and Capacitance Effects
(2014)
Hung, C. M.
;
Li, K. C.
;
Hsieh, E. R.
;
Wang, C. T.
;
Kou, C. I.
HEMT suffers from parasitic resistance (R-sd) and capacitance(C-gd) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R-sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C-gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.