Browsing by Author "Li, Lain-Jong"

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A Nanostructuring Method to Decouple Electrical and Thermal Transport through the Formation of Electrically Triggered Conductive Nanofilaments
(2018-07-12)
Retamal, Jose Ramon Duran
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Kang, Chen-Fang
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Lien, Der-Hsien
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Kuo, Wei-Cheng
;
Juang, Zhen-Yu
Transforming thermal energy into electric energy and vice versa needs the decoupling of electrical transport from thermal transport. An innovative strategy is proposed by forming/disrupting electrically triggered conductive nanofilaments within semiconducting thin films to switch thermoelectric properties between two states without further material modification and manufacturing processes. It can also controllably adjust the degree of decoupling, providing a potential resolution and performance adjustability for heat/coldness control or power consumption reduction on demand.
A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
(2016-01-01)
Tang, Ying-Tsan
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Li, Kai-Shin
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Li, Lain-Jong
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Li, Ming-Yang
;
Lin, Chang-Hsien
An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100 Omega-mu m for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.
Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma
(2016-12)
Cheng, Chia-Chin
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Lu, Ang-Yu
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Tseng, Chien-Chih
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Yang, Xiulin
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Hedhili, Mohamed Nejib
Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach using a remote hydrogen-plasma process to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H-2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. (C) 2016 Elsevier Ltd. All rights reserved.
Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions
(2017-05-18)
Chiu, Ming-Hui
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Tseng, Wei-Hsuan
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Tang, Hao-Ling
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Chang, Yung-Huang
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Chen, Chang-Hsiao
It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson's model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson's model is verified for the 2D heterojunction systems and the success of Anderson's model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson's rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices.
Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy
(2014-07-09)
Su, Sheng-Han
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Hsu, Yu-Te
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Chang, Yung-Huang
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Chiu, Ming-Hui
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Hsu, Chang-Lung
Bandgap tunability at single-layer molybdenum disulphide grain boundaries
(2015-02-01)
Huang, Yu Li
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Chen, Yifeng
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Zhang, Wenjing
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Quek, Su Ying
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Chen, Chang-Hsiao
Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40 +/- 0.05 eV for single-layer, 2.10 +/- 0.05 eV for bilayer and 1.75 +/- 0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85 +/- 0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.
Bidirectional All-Optical Synapses Based on a 2D Bi2O2Se/Graphene Hybrid Structure for Multifunctional Optoelectronics
(1970-01-01)
Yang, Chia-Ming
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Chen, Tsung-Cheng
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Verma, Dharmendra
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Li, Lain-Jong
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Liu, Bo
Neuromorphic computing has been extensively studied to mimic the brain functions of perception, learning, and memory because it may overcome the von Neumann bottleneck. Here, with the light-induced bidirectional photoresponse of the proposed Bi2O2Se/graphene hybrid structure, its potential use in next-generation neuromorphic hardware is examined with three distinct optoelectronic applications. First, a photodetector based on a Bi2O2Se/graphene hybrid structure presents positive and negative photoresponsibility of 88 and -110 A W-1 achieved by the excitation of visible wavelength and ultraviolet wavelength light at intensities of 1.2 and 0.3 mW cm(-2), respectively. Second, this unique photoresponse contributes to the realization of all optically stimulated long-term potentiation or long-term depression to mimic synaptic short-term plasticity and long-term plasticity, which are attributed to the combined effect of photoconductivity, bolometric, and photoinduced desorption. Third, the devices are applied to perform digital logic functions, such as "AND" and "OR," using full light modulation. The proposed Bi2O2Se/graphene-based optoelectronic device represents an innovative and efficient building block for the development of future multifunctional artificial neuromorphic systems.
Circular Polarized Emission of Tungsten Diselenide (WSe2) Atomic Layers with Plasmonic Metasurface
(2018-01-01)
Lin, Hsiang-Ting
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Chang, Chiao-Yun
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Cheng, Pi-Ju
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Li, Ming-Yang
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Cheng, Chia-Chin
A circularly polarized light source with ultrathin geometry were demonstrated by integrating the WSe2 atomic layers with plasmonic chiral metasurfaces. The intrinsic chiral emission of WSe2 was manipulated by chiral metasurfaces to achieve emission circular dichroism more than 25%.
Comparative study on MoS2 and WS2 for electrocatalytic water splitting
(2013-09-19)
Chen, Tzu-Yin
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Chang, Yung-Huang
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Hsu, Chang-Lung
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Wei, Kung-Hwa
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Chiang, Chia-Ying
Replacing Pt by earth abundant catalysts is one of the most important tasks toward potential large-scale HER applications. Among many potential candidates, low cost and earth abundant transition metal dichalcogenides such as MoS2 and WS2 have been promising as good H-2 evolution electrocatalysts when they are engineered into the structures with active sites. In this work, we have performed systematic studies on the catalytic reactivity of both MoS2 and WS2 materials produced by one-step and scalable thermolysis from (NH4)(2)WS4 and (NH4)(2)MoS4 precursors respectively. Structural analysis shows that these materials prepared at a higher thermolysis temperature exhibit higher crystallinity. The H-2 evolution electrocatalysts efficiency for the MoS2 prepared at a lower temperature is higher than those at higher temperatures, where amorphous MoS2 or S-2(2-) species instead of crystalline MoS2 is the main active site. By contrast, crystalline WS2 prepared at high temperature is identified to be the key reaction site. Both catalysts display excellent efficiency and durability as an electrocatalyst operating in acidic electrolytes. This work provides fundamental insights for further design and preparation of emergent metal dichalcogenide catalysts, beneficial for the development in clean energy. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
Controlled mechanical cleavage of bulk niobium diselenide to nanoscaled sheet, rod, and particle structures for Pt-free dye-sensitized solar cells
(2014)
Ibrahem, Mohammed Aziz
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Huang, Wei-Chih
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Lan, Tian-wey
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Boopathi, Karunakara Moorthy
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Hsiao, Yu-Chen
In this study, we report a one-step process for the preparation of NbSe2 nanosheets, nanorods and nanoparticles from pristine materials under the effects of shear and friction forces. Nevertheless, simple and facile methods for the large-scale syntheses of well-defined NbSe2 nanostructures in high yield have yet to be realized and that will have a great impact in a wide range of applications. For example, developing platinum (Pt)-free and highly efficient counter electrodes is meaningful and necessary for the cost reduction of dye-sensitized solar cells (DSSCs). By integrating this approach with a simple method of thin film preparation (spray coating) allowed us to prepare large-area, conductive, semitransparent flexible thin films of NbSe2. We have used microscopic and macroscopic methods to examine the morphologies, compositions, crystallinity, and electrical and optical properties of the converted NbSe2 nanostructures. DSSCs with NbSe2 nanosheet counter electrodes (CEs) achieved a conversion efficiency of 7.73%, superior to an efficiency of 7.01% for Pt-based CEs. Our NbSe2 nanostructure provides a cost-effective CE alternative to the noble metal Pt in DSSCs.
Deep-ultraviolet Raman scattering studies of monolayer graphene thin films
(2015-01-01)
Liu, Hsiang-Lin
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Siregar, Syahril
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Hasdeo, Eddwi H.
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Kumamoto, Yasuaki
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Shen, Chih-Chiang
We present joint experimental and theoretical investigations of the deep-ultraviolet Raman scattering spectra of monolayer graphene thin films. We found that upon a 266 nm laser excitation, while the G mode remains pronounced, the G\' mode is not observed. The G\' mode exhibits distinctive linewidth broadening towards the ultraviolet frequency region. The peak intensity ratio of the G\' and G modes increases dramatically excited at 355, 532, and 785 nm wavelengths. All of the experimental findings are in good agreement with the theory calculated by the tight-binding method. We theoretically show that the integrated intensity of the G\' mode is inversely proportional to the incident photon energy, whereas that of the G mode increases as the fourth power of the incident photon energy. These results extend our understanding of the double resonance Raman scattering process of graphene away from the Dirac cones and provide the foundation for future technologically important developments of graphene in the deep-ultraviolet frequency range. (C) 2014 Elsevier Ltd. All rights reserved.
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology
(2019-12-01)
Chung, Yun-Yan
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Lu, Kuan-Cheng
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Cheng, Chao-Ching
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Li, Ming-Yang
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Lin, Chao-Ting
For high-volume manufacturing of 2-D transistors, area-selective chemical reaction deposition (CVD) growth is able to provide good-quality 2-D layers and may be more effective than exfoliation from bulk crystals or wet/dry transfer of large-area as-grown 2-D layers. We have successfully grown continuous and uniform WS2 film comprising around seven layers by area-selective CVD approach using patterned tungsten source/drain metals as the seeds. The growth mechanism is inferred and supported by the transmission electron microscope (TEM) images, as well. The first top-gate MOSFETs of CVD-WS2 channels on SiOx/Si substrates are demonstrated to have good short channel electrical characteristics: ON-/OFF-ratio of 10(6), a subthreshold swing of 97 mV/decade, and nearly zero drain-induced barrier lowering (DIBL).
Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2
(2019-04-01)
Hsu, Wei-Ting
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Quan, Jiamin
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Wang, Chun-Yuan
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Lu, Li-Syuan
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Campbell, Marshall
Excitons, bound electron-hole pairs in a 2D plane, dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). A large exciton binding energy on the order of 0.5 eV was theoretically predicted and experimentally determined recently. These ultrastable excitons thus open an avenue to explore the exciton physics such as Bose-Einstein condensation and superfluidity at room temperature (Kasprzak et al 2006 Nature 443 409; Plumhof et al 2014 Nat. Mater. 13 247; Fogler et al 2014 Nat. Commun. 5 4555; Jiang and John 2014 Sci. Rep. 4 7432). Recent experiments further demonstrated the concept of Coulomb engineering via dielectric environments based on either solutions or few-layer graphene. However, the conducting nature of these dielectrics can lead to quenching of optical transitions. Thus, in order to utilize 'dielectric tuning' of the exciton binding energy and quasiparticle band gaps, one must use insulating dielectrics. Here, we investigate the impact of insulating dielectric environments on the exciton binding energy of monolayer WS2 and WSe2 by exciton Rydberg spectroscopy, in which the dielectric environment is systematically varied from kappa= 1.49 to 3.82. We found that, with increasing kappa value, the exciton binding energy and quasiparticle bandgap exhibit significant reductions. Quantitatively, our result follows the prediction of nonlocally-screened Keldysh potential very well. The fitted 2D polarizability, Chi(2D), agrees rather well with previous density function theory calculations. Their close agreement validates the nonlocally-screened Keldysh model which can be used to quantitatively predict the exciton binding energy for monolayer TMDs (and possibly other 2D materials) in different dielectric environments. Such a predictive model will play an important role for the design of van der Waals heterostructures and TMD-based optoelectronic devices.
Direct conversion of multilayer molybdenum trioxide to nanorods as multifunctional electrodes in lithium-ion batteries
(2014)
Ibrahem, Mohammed Aziz
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Wu, Feng-Yu
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Mengistie, Desalegn Alemu
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Chang, Chia-Seng
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Li, Lain-Jong
In this study we prepared molybdenum trioxide (MoO3) nanorods having average lengths of 0.5-1.5 mu m and widths of approximately 100-200 nm through a one-step mechanical break-down process involving favorable fracturing along the crystal direction. We controlled the dimensions of the as-prepared nanorods by applying various imposing times (15-90 min). The nanorods prepared over a reaction time of 90 min were, on average, much shorter and narrower relative to those obtained over 30 min. Evaluations of lithium-ion storage properties revealed that the electrochemical performance of these nanorods was much better than that of bulk materials. As cathodes, the nanorods could deliver a high specific capacity (>315 mA h g(-1)) with losses of less than 2% in the first cycle at a rate of 30 mA g(-1); as anodes, the specific capacity was 800 mA h g(-1) at a rate of 50 mA g(-1). Relative to alpha-MoO3 microparticles, these nanorods displayed significantly enhanced lithium-ion storage properties with higher reversible capacities and better rate performance, presumably because their much shorter diffusion lengths and higher specific surface areas allowed more-efficient insertion/deinsertion of lithium ions during the charge/discharge process. Accordingly, enhanced physical and/or chemical properties can be obtained through appropriate nanostructuring of materials.
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
(2011-09-01)
Su, Ching-Yuan
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Lu, Ang-Yu
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Wu, Chih-Yu
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Li, Yi-Te
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Liu, Keng-Ku
Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO(2) is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.
Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors
(2019-02-01)
Chen, Po-Chun
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Lin, Chih-Pin
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Hong, Chuan-Jie
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Yang, Chih-Hao
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Lin, Yun-Yan
Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 Am-1 for a channel length of 400 nm, contact resistance of 15 km, field-effect mobility of 15.5 cm(2)V(-1)s(-1), and the average on-off current ratio of 10(8) were successfully demonstrated
Efficient Heat Dissipation of Photonic Crystal Microcavity by Mono layer Graphene
(2013-12-01)
Shih, Min-Hsiung
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Li, Lain-Jong
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Yang, Yi-Chun
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Chou, Hsiang-Yu
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Lin, Cheng-Te
Graphene, which exhibits excellent thermal conductivity, is a potential heat dissipation medium for compact optoelectronic devices. Photonic devices normally produce large-quantity of unwanted heat, and thus, a heat dissipation strategy is urgently needed. In this study, single-layer graphene (SLG) grown by chemical vapor deposition (CVD) is used to cover the surface of a photonic crystal (PhC) cavity, where the heat flux produced by the PhC cavity can be efficiently dissipated along the in-plane direction of the SLG. The thermal properties of the graphene-capped PhC cavity were characterized by experiments and theoretical calculations. The thermal resistance of the SLG-capped PhC cavity obtained from experiments is lower than half of that of a bare PhC cavity. The temperature of a SLG-capped PhC cavity is 45 K lower than that without SLG capping under an optical power of 100 mu W. Our simulation results indicate that SLG receives the majority of the heat fluxes from the device, leading to the efficient heat dissipation. Both the experimental and simulation results suggest that the SLG is a promising material to enhance the heat dissipation efficiency for optoelectronic applications.
Efficient reduction of graphene oxide catalyzed by copper
(2012)
Lin, Yu-Chuan
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Liu, Keng-Ku
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Wu, Chih-Yu
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Chu, Chih-Wei
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Wang, Jacob Tse-Wei
We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm(2) V-1 s(-1), and lower sheet resistance (13 k Omega square(-1)) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.
Electrical Probing of Submicroliter Liquid Using Graphene Strip Transistors Built on a Nanopipette
(2012-01-09)
Chen, Chang-Hsiao
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Lin, Cheng-Te
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Lee, Yi-Hsien
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Liu, Keng-Ku
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Su, Ching-Yuan
Enhanced Electrocatalytic Activity of MoSx on TCNQ-Treated Electrode for Hydrogen Evolution Reaction
(2014-10-22)
Chang, Yung-Huang
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Nikam, Revannath D.
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Lin, Cheng-Te
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Huang, Jing-Kai
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Tseng, Chien-Chih
Molybdenum sulfide has recently attracted much attention because of its low cost and excellent catalytical effects in the application of hydrogen evolution reaction (HER). To improve the HER efficiency, many researchers have extensively explored various avenues such as material modification, forming hybrid structures or modifying geometric morphology. In this work, we reported a significant enhancement in the electrocatalytic activity of the MoSx via growing on Tetracyanoquinodimethane (TCNQ) treated carbon cloth, where the MoSx was synthesized by thermolysis from the ammonium tetrathiomolybdate ((NH4)(2)MoS4) precursor at 170 degrees C. The pyridinic N- and graphitic N-like species on the surface of carbon cloth arising from the TCNQ treatment facilitate the formation of Mo5+ and S-2(2-) species in the MoSx, especially with S-2(2-) serving as an active site for HER. In addition, the smaller particle size of the MoSx grown on TCNQ-treated carbon cloth reveals a high ratio of edge sites relative to basal plane sites, indicating the richer effective reaction sites and superior electrocatalytic characteristics. Hence, we reported a high hydrogen evolution rate for MoSx on TCNQ-treated carbon cloth of 6408 mL g(-1) cm(-2) h(-1) (286 mmol g(-1) cm(-2) h(-1)) at an overpotential of V = 0.2 V. This study provides the fundamental concepts useful in the design and preparation of transition metal dichalcogenide catalysts, beneficial in the development in clean energy