Browsing by Author "Li, Li-Yu"

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Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology
(2020-03-01)
Peng, Yin-Wei
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Chen, Chun-Heng
;
Li, Li-Yu
;
Hsin, Pi-Yu
;
Yu, Peichen
In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 x 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm(2), and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (tau(bulk) >= 10 ms) or low resistivity (rho <= 1 omega center dot cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.
Diffusion-Free Organic Hole Selective Contacts for Silicon Solar Cells
(2019-01-01)
Li, Li-Yu
;
Chen, Chun-Heng
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Chiu, Chi-Lin
;
Li, You-Lan
;
Meng, Hsin-Fei
The dopant-free carrier selective contacts (CSC) to replace the complex diffusion manufacturing are increasingly explored using a variety of different materials. In this work, we investigate various organic materials, including conductive polymer PEDOT: PSS, fluorescent polymers PFO and Green B, and small molecules DMFL-NPB, to serve as the hole selective con-tact (HSC). By analyzing the lifetime and implied open-circuit voltage, assessing of contact resistivity and band alignment, as well as the device efficiency, we evaluate the potential of soluble organic materials acting as the HSC. The results have shown that PEDOT: PSS could effectively passivate the silicon surface to increases the open-circuit voltage by 31 mV and the short-circuit current density by 2.9 mA/cm(2). Overall, the power conversion efficiency increases from 12.36% to 14.55%
Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells
(2019-01-01)
Chen, Yan-Syun
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Li, Li-Yu
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Yu, Peichen
;
Chao, Yu-Chiang
;
Meng, HsinFei
we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and Pb12 to modify the work function and enlarge the hole selectivity.
New designed electrode patterns on rear side of bifacial PERC solar cells
(2019-01-01)
Lin, Yu-Hsuan
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Li, Li-Yu
;
Chen, Sung-Yu
;
Hsu, Shih-Peng
;
Chen, Yu-Shen
In this paper, we demonstrate new electrode pattern on rear side of p-type bifacial passivated emitter and rear cells (bifacial-PERC) solar cells for reducing series resistance loss caused by the aluminum grid lines. Cell efficiency of bifacial PERC is enhanced by rear Al grids add multi bus-bar (MBB) or grid segments interconnection. The high J(sc) and FF value of the PERC+ using local grid with MBB as rear electrodes which increases the J(sc) by 0.5 mA/cm(2) and FF by 2.58 % compare to the PERC+ without rear MBB. The high Jsc and FF value of the PERC+ using local grid with vertical line segments as rear electrodes which increases the J(sc) by 0.34 mA/cm(2) and FF by 3.6 % compare to the PERC+ without vertical line segments. In contrast to the PERC cell, the bifacial PERC cell using localized Al grid on rear side and with thicker back surface field (BSF).