Browsing by Author "Li, Mei-Yi"

Now showing 1 - 4 of 4

DNA Mismatch Detection by Metal Ion Enhanced Impedance Analysis
(2009-10-01)
Jangjian, Peng-Chung
;
Liu, Tzeng-Feng
;
Tsai, Chuan-Mei
;
Li, Mei-Yi
;
Tsai, Ming-Shih
Conventional diagnoses of genetic mutation and disease depend on the analysis of DNA sequences. However, mismatches in the DNA sequences are difficult to detect using traditional sequencing. Doping metal ions, such as nickel, into the short DNA (28 mer similar to 30 mer), markedly reduces its electrical resistance, which is measured by electrical impedance analysis. The change in resistance that is caused by a mismatched base-pair in short DNA can also be monitored by this approach. In this study, the resistance increased exponentially with the number of mismatched base-pairs. Accordingly, an intuitive and direct method for evaluating the number of DNA mismatches can possibly be developed.
High Optical Conversion Capability within the Interface between Graphene and Si under Zero Bias and Visible to Near Infrared Regime
(2016)
Hsiao, Chin-Chiang
;
Wei, Mao-Qugn
;
Ren, Ting-Ting
;
Chen, Bo-Yi
;
Li, Mei-Yi
In this study, we demonstrate the high performance few-layer graphene-Si sensor with high photoresponsivity of 95 mA/W, operation behaviors with external bias as low as 0 V, and broadband operating light wavelength from 400 nm to 1000 nm by combining high transparency of few-layer graphene and n-type silicon. Although external bias benefits the photoresponsivity, the larger dark current is the price to pay. Under zero bias, the different Si substrate, n-type or p-type, provides variant Schottky barrier height guiding different photoelectrical behavior also be investigated in this work. According to the experimental results, few-layer graphene over p-type silicon (FLG p-Si) has one order higher the dark current of the few-layer graphene over n-type silicon (FLG n-Si) to ensure that the detection region between few-layer graphene and n-type silicon profits high optical-to-electrical conversion. Further, the capability of photocurrent-to-photovoltage conversion directly in one device is also provided and verified to profit the integration proposed device with periphery circuit easily.
High Photothermal Properties in Silicon Nanostructures
(2016)
Ren, Ting-Ting
;
Wei, Mao-Qugn
;
Hsiao, Chin-Chiang
;
Chen, Bo-Yi
;
Li, Mei-Yi
This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm -1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.
Room temperature negative differential resistance in DNA-based molecular devices
(2009-01-26)
Jangjian, Peng-Chung
;
Liu, Tzeng-Feng
;
Li, Mei-Yi
;
Tsai, Ming-Shih
;
Chang, Chia-Ching
A molecular device fabricated from metallic deoxyribonucleic acid (M-DNA) exhibits a negative differential resistance (NDR) behavior. When two gold electrodes were connected by Ni(2+)-chelated DNA, which was converted from lambda-DNA, not only was the conductivity of DNA improved, but a NDR device was formed as a full cyclic voltage sweep was applied to measure its current versus voltage characteristics at room temperature and in an ambient environment. Such electronic characteristics of a M-DNA device may have been caused by the redox reactions of Ni ions. This finding provides a simple way to construct electrical nanodevices from biological molecules.