Browsing by Author "Li, Po-Hsueh"

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Effects of EUV Irradiation on Poly-Si SONOS NVM Devices
(2011-05-01)
Tsui, Bing-Yue
;
Yen, Chih-Chan
;
Li, Po-Hsueh
;
Lai, Jui-Yao
;
電子工程學系及電子研究所
The effects of extreme-ultraviolet (EUV)-irradiation-induced damage on the characteristics of a silicon-oxide-nitride-oxide-silicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradiation, which indicates that the tunneling layer is damaged. Endurance performance degrades severely because the damage in the blocking oxide results in serious electron back injection after cycling operations. These defects cannot be recovered after 600 degrees C annealing. It is recommended that in-process high-dose EUV irradiation on a SONOS stack after a front-end-of-line process should be avoided.
Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
(2011-11-01)
Tsui, Bing-Yue
;
Li, Po-Hsueh
;
Yen, Chih-Chan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al 2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO(2). The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.