Browsing by Author "Li, SS"

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A voltage-tunable multicolor triple-coupled InGAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 mu m detection
(1996-10-14)
Chiang, JC
;
Li, SS
;
Tidrow, MZ
;
Ho, P
;
Tsai, M
A voltage-tunable multicolor triple-coupled quantum-well infrared photodetector (TC-QWIP) has been developed for 8-12 mu m detection. The TC-QWIP consists of three coupled quantum wells formed by an enlarged Si-doped InxGa1-xAs quantum well and two undoped GaAs quantum wells separated by two thin AlyGa1-yAs barriers. Two TC-QWIP structures with varying indium and aluminum compositions were designed and demonstrated. Due to the strong coupling effect of the asymmetrical quantum wells, three bound states (E(1), E(2), E(3)) are formed inside the quantum wells of the TC-QWIP. The main detection peak wavelength is due to E(1)-->E(3) bound states transition for both devices, while two secondary detection peaks due to E(1)-->E(2) and E(1)-->E(c) continuum states transitions under different biases were also observed. In addition, a strong quantum-confined Stark shift effect for the E(1)-->E(3) transition was observed in the wavelength range of 8.2-9.1 and 10.8-11.5 mu m for QWIP-A and QWIP-B, respectively; both devices exhibit a linear dependence of detection peak wavelength on the applied bias voltage. A spectral responsivity of R(i)=0,05 A/W and background limited performance (BLIP) detectivity D-BLIP*=6.1x10(9) cm root HZ/W were obtained at V-b=5 V, lambda(p)=8.6 mu m, and T-BLIP=66 K for QWIP-A, while R(i)=0.33 A/W and D-BLIP*=1.63x10(10) cm root Hz/W at V-b=4 V, pi(p)=11.2. mu m, and T-BLIP-50 K were obtained for QWIP-B. (C) 1996 American Institute of Physics.
A voltage-tunable multicolor triple-coupled InGAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 mu m detection
(1996-10-14)
Chiang, JC
;
Li, SS
;
Tidrow, MZ
;
Ho, P
;
Tsai, M
A voltage-tunable multicolor triple-coupled quantum-well infrared photodetector (TC-QWIP) has been developed for 8-12 mu m detection. The TC-QWIP consists of three coupled quantum wells formed by an enlarged Si-doped InxGa1-xAs quantum well and two undoped GaAs quantum wells separated by two thin AlyGa1-yAs barriers. Two TC-QWIP structures with varying indium and aluminum compositions were designed and demonstrated. Due to the strong coupling effect of the asymmetrical quantum wells, three bound states (E(1), E(2), E(3)) are formed inside the quantum wells of the TC-QWIP. The main detection peak wavelength is due to E(1)-->E(3) bound states transition for both devices, while two secondary detection peaks due to E(1)-->E(2) and E(1)-->E(c) continuum states transitions under different biases were also observed. In addition, a strong quantum-confined Stark shift effect for the E(1)-->E(3) transition was observed in the wavelength range of 8.2-9.1 and 10.8-11.5 mu m for QWIP-A and QWIP-B, respectively; both devices exhibit a linear dependence of detection peak wavelength on the applied bias voltage. A spectral responsivity of R(i)=0,05 A/W and background limited performance (BLIP) detectivity D-BLIP*=6.1x10(9) cm root HZ/W were obtained at V-b=5 V, lambda(p)=8.6 mu m, and T-BLIP=66 K for QWIP-A, while R(i)=0.33 A/W and D-BLIP*=1.63x10(10) cm root Hz/W at V-b=4 V, pi(p)=11.2. mu m, and T-BLIP-50 K were obtained for QWIP-B. (C) 1996 American Institute of Physics.
Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs
(1997-05-01)
Chin, A
;
Liao, CC
;
Chu, J
;
Li, SS
;
電子工程學系及電子研究所
We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (3 1 1)A GaAs. The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical dark I-V characteristic at all the measured temperatures from 40 to 120 K. The strained p-type AlGaAs/InGaAs QWIP exhibits a slightly asymmetrical dark I-V characteristic, but is markedly less asymmetrical than that doped with beryllium. The slight asymmetry in dark I-V characteristic and the large blue-shift in responsivity spectra may be due to the thickness modulation observed from TEM and the red-shift of PL peak energy, where PL peak energies from (3 1 1)A AlGaAs/InGaAs multiple quantum wells are red-shifts of 7 and 22 meV to the side-by-side grown (1 0 0).