Browsing by Author "Li, Y."

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A hybrid intelligent computational methodology for semiconductor device equivalent circuit model parameter extraction
(2006)
Li, Y.
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電信工程研究所
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Institute of Communications Engineering
In this paper, a hybrid intelligent computational methodology is presented for the parameter extraction of compact models. This solution technique integrates the genetic algorithm (GA), the neural network (NN), and the Levenberg-Marquardt (LM) method for current-voltage (I-V) curves characterization, optimization, and parameter extraction of deep-submicron metal-oxide-semiconductor field effect transistors (MOSFETs). For a specified compact model, this unified optimization technique extracts a set of corresponding parameters with respect to measured data. The GA is performed to search solutions according to the feedback of the NN, where the LM solves a local optimization problem with the input of the GA. The well-known BSIM and EKV compact models of MOSFETs have been studied and implemented for automatic parameters extraction. In terms of accuracy and convergence of score, the proposed optimization technique is computationally verified to show its advantages for parameter extraction of MOSFETs. Comparisons among pure GA approach, solution with GA and NN, solution with GA and LM, and the proposed method are also discussed.
A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing
(2014)
Lee, Y. -J.
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Cho, T. -C.
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Kao, K. -H.
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Sung, P. -J.
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Hsueh, F. -K.
For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (similar to 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. similar to 67mV/dec) and excellent on-off ratio (>10(6)) for both n and p channel devices. Threshold voltage (V-TH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.
A side-by-side comparison of Daya Bay antineutrino detectors
(1970-01-01)
An, F. P.
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An, Q.
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Bai, J. Z.
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Balantekin, A. B.
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Band, H. R.
"The Daya Bay Reactor Neutrino Experiment is designed to determine precisely the neutrino mixing angle theta(13) with a sensitivity better than 0.01 in the parameter sin(2) 2 theta(13) at the 90% confidence level. To achieve this goal, the collaboration will build eight functionally identical antineutrino detectors. The first two detectors have been constructed, installed and commissioned in Experimental Hall 1, with steady data-taking beginning September 23, 2011. A comparison of the data collected over the subsequent three months indicates that the detectors are functionally identical, and that detector-related systematic uncertainties are smaller than requirements. (C) 2012 Elsevier B.V. All rights reserved."
A SPICE-compatible mobility function for excimer laser annealed LTPS TFT analog circuit simulation
(2006)
Li, Y.
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Wang, C. -S.
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電信工程研究所
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Institute of Communications Engineering
In this paper, we present a calibrated SPICE-compatible mobility function for modeling and simulation of the excimer leaser annealed lower temperature polycrystalline silicon (LTPS) thin film transistors (TFTs). Compared with the conventional mobility function in the well-known RPI TFT equivalent circuit model, the proposed mobility function exhibits accurate results in terms of several DC characteristics. A physical-based model parameter extraction procedure is also proposed for studying the RPI TFT model with the proposed mobility. The model implemented in a circuit simulator for LTPS TFT analog circuit simulation shows reasonable outputs and encounters no any convergence problems.
Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.
(2015)
Chao, J. I.
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Liao, W. S.
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Lin, Y. W.
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Lin, J.
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Cheng, H. C.
Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.
(2015)
Chao, J. I.
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Liao, W. S.
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Lin, Y. W.
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Lin, J.
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Cheng, H. C.
EELS plasmon studies of silver/carbon core/shell nanocables prepared by simple arc discharge
(2007-04-01)
Wang, L. S.
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Buchholz, D. B.
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Li, Y.
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Li, J.
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Lee, C. Y.
A method for the fabrication of large quantities of high quality silver nanocables encapsulated in carbon nanotubes (Ag@C) using a hydrogen arc is presented. A growth mechanism based on the generation of poly-aromatic hydrocarbons by the hydrogen arc is proposed. The size-dependent electronic structures of the resultant materials are investigated using electron energy loss spectroscopy (EELS). The surface plasmon and bulk-excitation character observed by EELS are discussed. As the diameter of Ag@C nanocable decreases, the surface and bulk plasmons of the silver core shift to lower energy and the peaks broaden. Measurements of electrical conductivity exhibits a liner current-voltage character with a conductivity of 0.5x10(4) S/cm for the nanocable structure.
Field emission dependence on the tilted angle of palladium nanogaps for surface conduction electron-emitter displays
(2009-06-01)
Li, Y.
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Cheng, H. -W.
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電信工程研究所
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Institute of Communications Engineering
The emission efficiency of novel surface conduction electron-emitters corresponding to tilted angles (theta) of a nanogap-typed driving cathode is optimised. Among the parameters of the emitter pro. le, the apex angle is the most significant because the smaller angles induce a higher electric field. The higher electric field then attracts more particles into vacuum and then increases the emission current. However, the structure of the driving cathode limits the electron trajectory while the angle decreases, and it reflects that the portion of collected current by the anode decreases and results in a drop in emission efficiency. The electric field with larger tilted angles will be weakened, but most of the emitted electrons could be collected by the anode, which increases emission efficiency. This shows there is highest emission efficiency (about 37%) under an optimum angle (theta) of 60 degrees owing to a trade-off between emission efficiency and emitter apex.
First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
(2019-01-01)
Chang, S. -W.
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Sung, P. -J.
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Chu, T-Y.
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Lu, D. D.
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Wang, C. -J.
For the first time, CMOS inverters and 6T-SRAM cells based on vertically stacked gate-all-around complementary FETs (CFETs) are experimentally demonstrated. Manufacturing difficulties of vertically stacked source and drain electrodes of the CFETs have been overcome by using junctionless transistors, thereby reducing the number of lithographic steps required. Furthermore, with post metallization treatments, both the voltage transfer characteristics (VTCs) of CMOS inverters and butterfly curves of SRAM show significant improvements due to the symmetry of nMOS and pMOS threshold voltages. Simulation shows that 3-dimensional CFET inverters have lower input parasitic capacitance than standard 2-dimensional CMOS, leading to reduced gate delay and lower power consumption.
High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applications
(2016-01-01)
Lee, Y. -J.
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Hong, T. -C.
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Hsueh, F. -K.
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Sung, P. J.
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Chen, C. -Y.
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) ION and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high I-ON/I-OFF ratio and low subthreshold swing (S.S. similar to 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.
High Performance Silicon N-channel Gate-All-Around Junctionless Field Effect Transistors by Strain Technology
(2016)
Sung, P. -J.
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Cho, T. -C.
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Chen, P. -C.
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Hou, F. -J.
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Lai, C. -H
In this paper, strain effects on silicon n-channel gate-allaround (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs show enhancement of up to 42%. The high performance strained JLFETs exhibit superior gate control (I-on/I-off > 10(9)) and ideal S.S. (65 mV/dec.) as a channel width scales down to 20 nm. Drive currents and leakage currents are improved simultaneously after inducing strain technology.
Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing
(2018-01-01)
Wang, Z. R.
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Li, Y.
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Su, Y. T.
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Zhou, Y. X.
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Yin, K. S.
RRAM is a promising candidate to construct in-memory computing architecture which can break through the von Neumann bottleneck. Taking advantage of the CMOS compatible 1T1R RRAM, functionally complete Boolean logics can be realized within two steps in a single unit that can suppress sneak pass problem and avoid cascading problem partially. In addition, an 8-bit pre-calculation adder with low computation complexity is designed and demonstrated experimentally to verify the feasibility and efficiency of 1T1R based in-memory computing architecture, which is applicable to future energy-efficient information processing systems.
Improved measurement of electron antineutrino disappearance at Daya Bay
(2013-01-01)
An, F. P.
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An, Q.
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Bai, J. Z.
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Balantekin, A. B.
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Band, H. R.
We report an improved measurement of the neutrino mixing angle theta(13) from the Daya Bay Reactor Neutrino Experiment. We exclude a zero value for sin(2)2 theta(13) with a significance of 7.7 standard deviations. Electron antineutrinos from six reactors of 2.9 GW(th) were detected in six antineutrino detectors deployed in two near (flux-weighted baselines of 470 m and 576 m) and one far (1648 m) underground experimental halls. Using 139 days of data, 28909 (205308) electron antineutrino candidates were detected at the far hall (near halls). The ratio of the observed to the expected number of antineutrinos assuming no oscillations at the far hall is 0.944 +/- 0.007(stat.)+/- 0.003(syst.). An analysis of the relative rates in six detectors finds sin(2)2 theta(13)= 0.089 +/- 0.010(stat.)+/- 0.005(syst.) in a three-neutrino framework.
Intercellular transport of endosomes revealed by live imaging in Drosophila
(2015)
Li, Y.
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Yang, W.
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Cheng, L.
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Lin, C.
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Ho, Y.
Intercellular transport of endosomes revealed by live imaging in Drosophila
(2015)
Li, Y.
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Yang, W.
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Cheng, L.
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Lin, C.
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Ho, Y.
Observation of Electron-Antineutrino Disappearance at Daya Bay
(2012-04-23)
An, F. P.
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Bai, J. Z.
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Balantekin, A. B.
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Band, H. R.
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Beavis, D.
The Daya Bay Reactor Neutrino Experiment has measured a nonzero value for the neutrino mixing angle 0(13) with a significance of 5.2 standard deviations. Antineutrinos from six 2.9 GW(th) reactors were detected in six antineutrino detectors deployed in two near (flux-weighted baseline 470 m and 576 m) and one far (1648 m) underground experimental halls. With a 43 000 ton-GW(th)-day live-time exposure in 55 days, 10 416 (80 376) electron-antineutrino candidates were detected at the far hall (near halls). The ratio of the observed to expected number of antineutrinos at the far hall is R = 0.940 +/- 0.011(stat.) +/- 0.004(syst.). A rate-only analysis finds sin(2)2 theta(13) = 0.092 +/- 0.016(stat.) +/- 0.005(syst.) in a three-neutrino framework.
Results from the Daya Bay Reactor Neutrino Experiment
(2014-01-01)
Tsang, K. V.
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An, F. P.
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An, Q.
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Bai, J. Z.
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Balantekin, A. B.
The Daya Bay Reactor Neutrino Experiment was designed to achieve a sensitivity on the value of sin(2) 2 theta(13). to better than 0.01 at 90% CL. The experiment consists of eight antineutrino detectors installed underground at different baselines from six nuclear reactors. With data collected with six antineutrino detectors for 55 days, Daya Bay announced the discovery of a non-zero value for sin(2) 2 theta(13) with a significance of 5.2 standard deviations in March 2012. The most recent analysis with 139 days of data acquired in a six-detector configuration yields sin(2) 2 theta(13) = 0.089 +/- 0.010(stat.) +/- 0.005(syst.), which is the most precise measurement of sin(2) 2 theta(13) to date.
The detector system of the Daya Bay reactor neutrino experiment
(2016-03-01)
An, F. P.
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Bai, J. Z.
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Balantekin, A. B.
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Band, H. R.
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Beavis, D.
The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of (nu) over bar (e) oscillations over km-baselines. Subsequent data has provided the world\'s most precise measurement of sin 2 2013 and the effective mass splitting Delta m(ee)(2). The experiment is located in Daya Bay, China where the cluster of six nuclear reactors is among the world\'s most prolific sources of electron antineutrinos. Multiple antineutrino detectors are deployed in three underground water pools at different distances from the reactor cores to search for deviations in the antineutrino rate and energy spectrum due to neutrino mixing. Instrumented with photomultiplier tubes, the water pools serve as shielding against natural radioactivity from the surrounding rock and provide efficient muon tagging. Arrays of resistive plate chambers over the top of each pool provide additional muon detection. The antineutrino detectors were specifically designed for measurements of the antineutrino flux with minimal systematic uncertainty. Relative detector efficiencies between the near and far detectors are known to better than 0.2%. With the unblinding of the final two detectors\' baselines and target masses, a complete description and comparison of the eight antineutrino detectors can now be presented. This paper describes the Daya Bay detector systems, consisting of eight antineutrino detectors in three instrumented water pools in three underground halls, and their operation through the first year of eight detector data-taking. (C) 2015 Elsevier B.V. All rights reserved.
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
(2018-01-01)
Sung, P. -J.
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Chang, C. -Y.
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Chen, L. -Y.
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Kao, K. -H.
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Su, C. -J.
For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 degrees C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.