Browsing by Author "Lian, Derming"
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Item type:Item, Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics(2010-03-01) ;He, Bo-Ching ;Wen, Hua-Chiang ;Chinag, Tun-Yuan ;Chang, Zue-ChinLian, DermingIn this study, we examined the effect of high-temperature oxidation treatment on the SiGe epitaxial thin films deposited on Si substrates. The X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques were employed to investigate the crystallographic structure, surface roughness, and hardness (H) of the SiGe thin films, respectively. The high-temperature oxidation treatment led to Ge pileup at the surface of the SiGe thin films. In addition, strain relaxation occurred through the propagation of misfit dislocations and could be observed through the cross-hatch pattern (800-900 degrees C) and SiGe islands (1000 degrees C) at the surface of the SiGe thin films. Subsequent hardness (H) measurement on the SiGe thin films by continuous penetration depth method indicated that the phenomenon of Ge pileup caused a slightly reduced H (below 50 nm penetration depth), while relaxation-induced defects caused an enhanced H (above 50 nm penetration depth). This reveals the influence of composition and defects on the structure strength of high-temperature oxidation-treated SiGe thin films. (C) 2009 Elsevier B.V. All rights reserved.Item type:Item, Evaluating the abrasive wear of Zn(1-x)Mn(x)O heteroepitaxial layers using a nanoscratch technique(2010-08-01) ;Chang, Yu-Ming ;Wen, Hua-Chiang ;Yang, Chu-Shou ;Lian, DermingTsai, Chien-HuangIn this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn(1-x)Mn(x)O epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn(1-x)Mn(x)O epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn(1-x)Mn(x)O films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn(1-x)Mn(x)O films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn(1-x)Mn(x)O epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Evaluating the abrasive wear of Zn1-xMnxO heteroepitaxial layers using a nanoscratch technique(2010-08-01) ;Chang, Yu-Ming ;Wen, Hua-Chiang ;Yang, Chu-Shou ;Lian, DermingTsai, Chien-HuangIn this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn1-xMnxO epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn1-xMnxO films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn1-xMnxO films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn1-xMnxO epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Nanoscratch study of Zn(1-x)Mn(x)O heteroepitaxial layers(2010-10-15) ;Chang, Yu-Ming ;Chang, Zue-Chin ;Lian, Derming ;Yang, Chu-ShouYau, Wei-HungWe investigated the nanotribological properties of Zn(1-x)Mn(x)O epilayers (0 <= x <= 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (mu) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques. The nanoscratch system gave the mu value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn(1-x)Mn(x)O epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn(1-x)Mn(x)O epilayers can be identified by their nanotribological behavior. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Nanoscratch study of Zn1-xMnxO heteroepitaxial layers(2010-10-15) ;Chang, Yu-Ming ;Chang, Zue-Chin ;Lian, Derming ;Yang, Chu-ShouYau, Wei-HungWe investigated the nanotribological properties of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (mu) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques. The nanoscratch system gave the mu value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn1-xMnxO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn1-xMnxO epilayers can be identified by their nanotribological behavior. (C) 2010 Elsevier B.V. All rights reserved.