Browsing by Author "Liang, Mong-Song"

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High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
(2007-02-01)
Hung, B. F.
;
Wu, C. H.
;
Chin, Albert
;
Wang, S. J.
;
Yen, F. Y.
A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.
Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
(2006-10-16)
Wu, Wei-Hao
;
Tsui, Bing-Yue
;
Chen, Mao-Chieh
;
Hou, Yong-Tian
;
Jin, Yin
Threshold voltage instability measured by the pulse current-voltage technique has been recognized as the transient charging and discharging of the preexisting bulk traps in Hf-based high-k gate dielectrics, and these high-k traps or called border traps can instantly exchange charge carriers with the underlying Si substrate by tunneling through the thin interfacial oxide. Based on an elastic tunneling model through trapezoidal potential barriers, the spatial and energetic distribution of border traps in the HfO2/SiO2 high-k gate stack can be profiled as a smoothed, three-dimensional mesh by measuring the low-frequency capacitance-voltage characteristics of high-k metal-oxide-semiconductor capacitors with n-type Si substrate.
Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
(2007-06-01)
Wu, Wei-Hao
;
Tsui, Bing-Yue
;
Chen, Mao-Chieh
;
Hou, Yong-Tian
;
Jin, Yin
Transient charging and discharging of border traps in the dual-layer HfO2/SiO2 high-kappa. gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO2 high-kappa. dielectric within the transient charging and discharging stages in one pulse cycle. Moreover, the transient charging and discharging behaviors could be observed in the time scale of 10(-8)-10(-4) s and well described by the charge trapping/detrapping model with dispersive capture/emission time constants used in static positive bias stress. Finally, the frequency and voltage dependencies of the border trap area density could also be transformed into the spatial and energetic distribution of border traps as a smoothed 3-D mesh profiling.