Browsing by Author "Liang, Victor"

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Design for integration of RF power transistors in 0.13 mu m advanced CMOS technology
(2007)
Huang, Sheng-Yi
;
Chen, Kun-Ming
;
Huang, Guo-Wei
;
Chang, Chun-Yen
;
Hung, Cheng-Chou
An RF power MOSFET was proposed and manufactured in a standard 0.13 mu m CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n(-) region. The breakdown voltage was 4.3V at gate bias of 1.2V. The cutoff frequency and maximum oscillation frequency were 68GHz and 87GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8dB, 15.9dBm and 43.5%, respectively, at 2.4GHz. Good RF linearity also addressed OIP3 of 28.6dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.
On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
(2007-05-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.
RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs
(2006)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
Temperature dependence of high frequency noise behaviors for RF MOSFETs
(2008-08-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (i(g)), channel noise current (i(d)) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation noise current are found to rise as temperature increases, and decline for the channel noise current. Moreover, by using van der Ziel's noise model, our experimental results show that, besides ambient temperature, the channel conductance is the main factor dominating the RF noise behaviors. Finally, bias dependence results are also presented.